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Volumn 2, Issue 1, 2006, Pages 311-328

Charge trapping in high-Κ gate dielectrics: A recent understanding

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DEPOSITION; ELECTRON TRAPS; MOS DEVICES; TRANSISTORS;

EID: 33745479385     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (7)

References (34)
  • 16
    • 85120183417 scopus 로고    scopus 로고
    • Ed. John Wiley and Sons, New York
    • nd Ed. John Wiley and Sons, New York, 1998, p. 376.
    • (1998) nd , pp. 376
    • Schroder, D.K.1
  • 24
    • 33745471100 scopus 로고    scopus 로고
    • M. Houssa, Editor, Institute of Physics Publishing, Bristol and Philadelphia
    • J. Robertson and P. W. Peacock, High-k Gate Dielectrics, M. Houssa, Editor, Institute of Physics Publishing, Bristol and Philadelphia, 2004; pp.390-392.
    • (2004) High-k Gate Dielectrics , pp. 390-392
    • Robertson, J.1    Peacock, P.W.2
  • 26
    • 33745432211 scopus 로고    scopus 로고
    • M. Houssa, Ed., Bristol and Philadelphia: Institute of Physics Publishing
    • Jean-Luc Autran, Daniela Munteanu and Michel Houssa, in High-k Gate Dielectrics, M. Houssa, Ed., Bristol and Philadelphia: Institute of Physics Publishing, 2004, pp. 271-281.
    • (2004) High-k Gate Dielectrics , pp. 271-281
    • Autran, J.-L.1    Munteanu, D.2    Houssa, M.3
  • 32
    • 3042715207 scopus 로고    scopus 로고
    • M. Houssa, Editor, Bristol and Philadelphia: Institute of Physics Publishing
    • M. Houssa, High-k Gate Dielectrics, M. Houssa, Editor, Bristol and Philadelphia: Institute of Physics Publishing, 2004, pp.467-474.
    • (2004) High-k Gate Dielectrics , pp. 467-474
    • Houssa, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.