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Volumn 106, Issue 5, 2009, Pages

Influence of the amorphous/crystalline phase of Zr1-xAl xO2 high- k layers on the capacitance performance of metal insulator metal stacks

(8) Paskaleva, Albena a Lemberger, Martin b Bauer, Anton J b Weinreich, Wenke c Heitmann, Johannes d Erben, Elke d Schröder, Uwe d Oberbeck, Lars d

a INSTITUTE OF SOLID STATE PHYSICS (Bulgaria)

b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

c Fraunhofer Center Nanoelectronic Technologies (Germany)

d QIMONDA DRESDEN GMBH AND CO OHG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; BOTTOM ELECTRODES; DIELECTRIC BEHAVIOR; DIELECTRIC LAYER; DIELECTRIC THICKNESS; ELECTRICAL BEHAVIORS; INTERFACIAL LAYER; METAL ELECTRODES; METAL INSULATOR METALS; METAL-INSULATOR-METAL STRUCTURES; NON-LINEARITY; STRUCTURAL CHANGE; TIO;

ALUMINUM; CAPACITANCE; CHARGE TRAPPING; CRYSTALLIZATION; DIELECTRIC MATERIALS; DIELECTRIC RELAXATION; GRAIN BOUNDARIES; METAL INSULATOR BOUNDARIES; METALS; OZONE; PHASE INTERFACES; TITANIUM NITRIDE; ZIRCONIUM;

STRUCTURAL METALS;

EID: 70349337795 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3204666 Document Type: Article

Times cited : (26)

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