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Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 497-500

Reliability aspects of Hf-based capacitors: Breakdown and trapping effects

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; HAFNIUM; LEAKAGE CURRENTS; RELIABILITY; VOLTAGE MEASUREMENT;

EID: 34247156639     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.017     Document Type: Article
Times cited : (9)

References (10)
  • 1
    • 19944430636 scopus 로고    scopus 로고
    • Bersuker G, Sim JH, Young CD, Choi R, Lee BH, Lysaght P. Effects of structural properties of Hf-based gate stack on transistor performance. In: Integration of Advanced Micro- and Nanoelectronics Devices. 2004. p. 31-5.
  • 2
    • 23844504847 scopus 로고    scopus 로고
    • y gate stacks on VT instability and charge trapping using ultra-short pulse I-V characterization. In: 2005 IEEE International Reliability Physics Symposium. p. 75-9.
  • 3
    • 20644440412 scopus 로고    scopus 로고
    • Threshold voltage instabilities in high- kappa gate dielectric stacks
    • Zafar S., Kumar A., Gusev E., and Cartier E. Threshold voltage instabilities in high- kappa gate dielectric stacks. IEEE Trans Dev Mater Reliab 5 (2005) 45-64
    • (2005) IEEE Trans Dev Mater Reliab , vol.5 , pp. 45-64
    • Zafar, S.1    Kumar, A.2    Gusev, E.3    Cartier, E.4
  • 4
    • 33751035727 scopus 로고    scopus 로고
    • 4/HfSiON stack for improved retention. 21st NVSMW. 2006. p. 56-7.
  • 5
    • 33745167324 scopus 로고    scopus 로고
    • Cho ES, Lee CH, Kim TY, Sung SK, Cho BK, Lee C. Hf-silicate inter-poly dielectric technology for sub 70 nm body tied FinFET flash memory. In: Symposium on VLSI Technology. 2005. p. 208-9.
  • 6
    • 3042513272 scopus 로고    scopus 로고
    • Kerber M, Duschl R, Reisinger H, Jakschik S, Schroder U, Hecht T, et al. Influence of charge trapping on AC reliability of high-k dielectrics. In: 2004 IEEE International Reliability Physics Symposium. 2004. p. 585-6.
  • 7
    • 1142276078 scopus 로고    scopus 로고
    • Prediction of dielectric reliability from I-V characteristics: Poole-Frenkel conduction mechanism leading to square root E model for silicon nitride MIM capacitor
    • Allers K.H. Prediction of dielectric reliability from I-V characteristics: Poole-Frenkel conduction mechanism leading to square root E model for silicon nitride MIM capacitor. Microelectron Reliab 44 (2004) 411-423
    • (2004) Microelectron Reliab , vol.44 , pp. 411-423
    • Allers, K.H.1
  • 8
    • 20444477165 scopus 로고    scopus 로고
    • Conduction band-edge States associated with the removal of d-state degeneracies by the Jahn-Teller effect
    • Lucovsky G., Fulton C.C., Zhang Y., Zou Y., Luning J., Edge L.F., et al. Conduction band-edge States associated with the removal of d-state degeneracies by the Jahn-Teller effect. IEEE Trans Dev Mater Reliab 5 (2005) 65-83
    • (2005) IEEE Trans Dev Mater Reliab , vol.5 , pp. 65-83
    • Lucovsky, G.1    Fulton, C.C.2    Zhang, Y.3    Zou, Y.4    Luning, J.5    Edge, L.F.6
  • 10
    • 85190274823 scopus 로고    scopus 로고
    • Duschl R, Vollertsen RP. Voltage acceleration of oxide breakdown in the sub-10 nm Fowler-Nordheim and direct tunneling regime. IEEE International Integrated Reliability Workshop Final Report. 2005. p. 44-8.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.