Beneficial effect of post-metallization H2 annealing on Ta 2O5 stack capacitors

Journal of Physics D: Applied Physics

Volumn 39, Issue 14, 2006, Pages 2950-2954

  Paskaleva, A ^a   Atanassova, E ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; HYDROGEN; INTERFACES (MATERIALS); LEAKAGE CURRENTS; METALLIZING; NITROGEN; SILICON; SPUTTER DEPOSITION; TANTALUM COMPOUNDS;

CAPACITANCE-VOLTAGE; ELECTRICAL BEHAVIOUR; ELECTRICALLY ACTIVE DEFECTS; POST-METALLIZATION;

CAPACITORS;

EID: 33745714023     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/14/012     Document Type: Article

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