Constant current stress of Ti-doped Ta2O5 on nitrided Si

Journal of Physics D: Applied Physics

Volumn 42, Issue 2, 2009, Pages

  Paskaleva, A ^a   Atanassova, E ^a   Novkovski, N ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; DEFECTS; DEGRADATION; LITHIUM BATTERIES; MOSFET DEVICES; NITRIDATION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON; SILICON COMPOUNDS; TANTALUM;

BULK DIELECTRICS; CONSTANT CURRENT STRESS; DEFECT GENERATIONS; DIELECTRIC DEGRADATIONS; DOPING METHODS; EFFECT OF DOPING; ELECTRICAL STRESS; ENABLING TOOLS; FLAT-BAND VOLTAGE SHIFTS; INDUCED DEFECTS; KEY FACTORS; METAL ELECTRODES; SI-SURFACE NITRIDATION PROCESS; SLOW STATE; STACKED FILMS; STRESS DEGRADATIONS; STRESS-INDUCED; STRESS-INDUCED LEAKAGE CURRENTS; SURFACE NITRIDATION; UNDER GATES;

DOPING (ADDITIVES);

EID: 63649092152     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/2/025105     Document Type: Article

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