-
1
-
-
23444433598
-
-
0957-4484 10.1088/0957-4484/16/9/016.
-
X. Blasco, M. Porti, M. Nafriía, X. Aymerich, J. Ṕtry, and W. Vandervorst, Nanotechnology 0957-4484 10.1088/0957-4484/16/9/016 16, 1506 (2005).
-
(2005)
Nanotechnology
, vol.16
, pp. 1506
-
-
Blasco, X.1
Porti, M.2
Nafriía, M.3
Aymerich, X.4
Ṕtry, J.5
Vandervorst, W.6
-
2
-
-
30344486689
-
-
0169-4332 10.1016/j.apsusc.2005.04.010.
-
W. Frammelsberger, G. Benstetter, J. Kiely, and R. Stamp, Appl. Surf. Sci. 0169-4332 10.1016/j.apsusc.2005.04.010 252, 2375 (2006).
-
(2006)
Appl. Surf. Sci.
, vol.252
, pp. 2375
-
-
Frammelsberger, W.1
Benstetter, G.2
Kiely, J.3
Stamp, R.4
-
3
-
-
34548695214
-
-
0026-2714 10.1016/j.microrel.2007.07.045.
-
M. Lanza, M. Porti, M. Nafria, G. Benstetter, W. Frammelsberger, H. Ranzinger, E. Lodermeier, and G. Jaschke, Microelectron. Reliab. 0026-2714 10.1016/j.microrel.2007.07.045 47, 1424 (2007).
-
(2007)
Microelectron. Reliab.
, vol.47
, pp. 1424
-
-
Lanza, M.1
Porti, M.2
Nafria, M.3
Benstetter, G.4
Frammelsberger, W.5
Ranzinger, H.6
Lodermeier, E.7
Jaschke, G.8
-
4
-
-
0029369746
-
-
1071-1023 10.1116/1.588113.
-
S. J. O'Shea, R. M. Atta, M. P. Murrell, and M. E. Welland, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.588113 13, 1945 (1995).
-
(1995)
J. Vac. Sci. Technol. B
, vol.13
, pp. 1945
-
-
O'Shea, S.J.1
Atta, R.M.2
Murrell, M.P.3
Welland, M.E.4
-
5
-
-
33845450358
-
-
0021-8979 10.1063/1.1430542.
-
M. Porti, M. Nafriía, X. Aymerich, A. Olbrich, and B. Ebersberger, J. Appl. Phys. 0021-8979 10.1063/1.1430542 91, 2071 (2002).
-
(2002)
J. Appl. Phys.
, vol.91
, pp. 2071
-
-
Porti, M.1
Nafriía, M.2
Aymerich, X.3
Olbrich, A.4
Ebersberger, B.5
-
6
-
-
29244462884
-
-
0018-9383 10.1109/TED.2005.859705.
-
X. Blasco, M. Nafriía, X. Aymerich, J. Ṕtry, and W. Vandervorst, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2005.859705 52, 2817 (2005).
-
(2005)
IEEE Trans. Electron Devices
, vol.52
, pp. 2817
-
-
Blasco, X.1
Nafriía, M.2
Aymerich, X.3
Ṕtry, J.4
Vandervorst, W.5
-
8
-
-
13544255525
-
-
0003-6951 10.1063/1.1846955.
-
X. N. Xie, H. J. Chung, C. H. Sow, and A. T. S. Wee, Appl. Phys. Lett. 0003-6951 10.1063/1.1846955 86, 023112 (2005).
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 023112
-
-
Xie, X.N.1
Chung, H.J.2
Sow, C.H.3
Wee, A.T.S.4
-
9
-
-
0025404941
-
-
0040-6090 10.1016/0040-6090(90)90098-X.
-
J. Sune, I. Placencia, N. Barnoil, E. Farres, F. Martin, and X. Aymerich, Thin Solid Films 0040-6090 10.1016/0040-6090(90)90098-X 185, 347 (1990).
-
(1990)
Thin Solid Films
, vol.185
, pp. 347
-
-
Sune, J.1
Placencia, I.2
Barnoil, N.3
Farres, E.4
Martin, F.5
Aymerich, X.6
-
16
-
-
46049085611
-
-
V. Yanev, M. Rommel, M. Lemberger, T. Erlbacher, S. Petersen, B. Amon, A. J. Bauer, H. Ryssel, A. Paskaleva, W. Weinreich, C. Fachmann, J. Heilmann, and U. Schroeder, Appl. Phys. Lett. 92, 252910 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 252910
-
-
Yanev, V.1
Rommel, M.2
Lemberger, M.3
Erlbacher, T.4
Petersen, S.5
Amon, B.6
Bauer, A.J.7
Ryssel, H.8
Paskaleva, A.9
Weinreich, W.10
Fachmann, C.11
Heilmann, J.12
Schroeder, U.13
-
17
-
-
14644425305
-
-
J. Ṕtry, W. Vandervorst, L. Pantisano, and R. Degraeve, Microelectron. Reliab. 45, 815 (2005).
-
(2005)
Microelectron. Reliab.
, vol.45
, pp. 815
-
-
Ṕtry, J.1
Vandervorst, W.2
Pantisano, L.3
Degraeve, R.4
-
18
-
-
1642587647
-
-
0167-9317 10.1016/j.mee.2003.12.035.
-
X. Blasco, J. Ṕtry, M. Nafriía, X. Aymerich, O. Richard, and W. Vandervorst, Microelectron. Eng. 0167-9317 10.1016/j.mee.2003.12.035 72, 191 (2004).
-
(2004)
Microelectron. Eng.
, vol.72
, pp. 191
-
-
Blasco, X.1
Ṕtry, J.2
Nafriía, M.3
Aymerich, X.4
Richard, O.5
Vandervorst, W.6
-
19
-
-
4944235448
-
-
1071-1023 10.1116/1.1768529.
-
D. M. Schaadt, E. T. Yu, V. Vaithyanathan, and D. G. Schlom, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1768529 22, 2030 (2004).
-
(2004)
J. Vac. Sci. Technol. B
, vol.22
, pp. 2030
-
-
Schaadt, D.M.1
Yu, E.T.2
Vaithyanathan, V.3
Schlom, D.G.4
-
20
-
-
20644440412
-
-
1530-4388 10.1109/TDMR.2005.845880.
-
S. Zafar, A. Kumar, E. Gusev, and E. Cartier, IEEE Trans. Device Mater. Reliab. 1530-4388 10.1109/TDMR.2005.845880 5, 45 (2005).
-
(2005)
IEEE Trans. Device Mater. Reliab.
, vol.5
, pp. 45
-
-
Zafar, S.1
Kumar, A.2
Gusev, E.3
Cartier, E.4
-
21
-
-
33751405905
-
-
Proceedings of the ESSDERC (Grenoble, France),.
-
M. Aoulaiche, M. Houssa, R. Degraeve, G. Groeseneken, S. De Gendt, and M. M. Heyns, Proceedings of the ESSDERC (Grenoble, France, 2005), p. 197.
-
(2005)
, pp. 197
-
-
Aoulaiche, M.1
Houssa, M.2
Degraeve, R.3
Groeseneken, G.4
De Gendt, S.5
Heyns, M.M.6
-
22
-
-
20444483731
-
-
1530-4388 10.1109/TDMR.2005.845807.
-
B. H. Lee, R. Choi, J. H. Sim, S. A. Krishnan, J. J. Peterson, G. A. Brown, and G. Bersuker, IEEE Trans. Device Mater. Reliab. 1530-4388 10.1109/TDMR.2005.845807 5, 20 (2005).
-
(2005)
IEEE Trans. Device Mater. Reliab.
, vol.5
, pp. 20
-
-
Lee, B.H.1
Choi, R.2
Sim, J.H.3
Krishnan, S.A.4
Peterson, J.J.5
Brown, G.A.6
Bersuker, G.7
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