Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 819-822

  Lemberger, Martin ^a   Paskaleva, Albena ^b   Zürcher, Stefan ^c   Bauer, Anton J ^b   Frey, Lothar ^a,b   Ryssel, Heiner ^a,b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRODEPOSITION; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIS DEVICES; PERMITTIVITY; RAPID THERMAL ANNEALING; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURES; ELECTRICAL CHARACTERIZATION; GATE DIELECTRICS; POST-DEPOSITION ANNEALING;

THIN FILMS;

EID: 14644444567     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.040     Document Type: Conference Paper

References (8)

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