Ab initio study of charge trapping and dielectric properties of Ti-doped HfO2

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 3, 2009, Pages

  Munoz Ramo D ^a   Shluger, A L ^a,b   Bersuker, G ^c  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b TOHOKU UNIVERSITY   (Japan)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 59249105269     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.035306     Document Type: Article

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