A surface potential based drain current model for asymmetric double gate MOSFETs

Solid-State Electronics

Volumn 56, Issue 1, 2011, Pages 148-154

  Dutta, Pradipta ^a   Syamal, Binit ^b   Mohankumar, N ^c   Sarkar, C K ^b  

^a KIIT UNIVERSITY   (India)

^b JADAVPUR UNIVERSITY   (India)

^c SKP Engineering College   (India)

Author keywords

Asymmetric double gate MOSFET; Pao Sah's double integral; Poisson's equation; Short channel effects

Indexed keywords

2-D NUMERICAL SIMULATION; ASYMMETRIC OPERATION; BACK GATES; CHANNEL DOPINGS; CHANNEL POTENTIAL; CURRENT VOLTAGE; DG MOSFETS; DOUBLE GATE MOSFET; DOUBLE INTEGRALS; DOUBLE-GATE MOSFETS; DRAIN CURRENT MODELS; GATE OXIDE; NEWTON-RAPHSON ITERATIVE METHOD; PAO-SAH'S DOUBLE INTEGRAL; POISSON'S EQUATION; SHORT-CHANNEL EFFECT; SOURCE AND DRAINS; SURFACE POTENTIAL-BASED; TERMINAL VOLTAGES;

DOPING (ADDITIVES); GALERKIN METHODS; GATE DIELECTRICS; INTEGRAL EQUATIONS; MOS DEVICES; MOSFET DEVICES; POISSON EQUATION; SURFACE POTENTIAL; SURFACE PROPERTIES; TWO DIMENSIONAL;

DRAIN CURRENT;

EID: 78751643322     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.10.025     Document Type: Article

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