A novel high-performance and robust sense amplifier using independent gate control in sub-50-nm double-gate MOSFET

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Volumn 14, Issue 2, 2006, Pages 183-192

  Mukhopadhyay, Saibal ^a,b   Mahmoodi, Hamid ^a,b,c   Roy, Kaushik ^a,b,d,e,f  

^a IEEE   (United States)

^b Purdue University   (United States)

^c SAN FRANCISCO STATE UNIVERSITY   (United States)

^d PURDUE UNIVERSITY   (United States)

^e Faculty Scholar ^*

^f Zenasis Incorporated

Author keywords

Double gate (DG) device; Independent gate operation; Performance; Robustness; Sense amplifiers

Indexed keywords

DOUBLE-GATE (DG) DEVICE; INDEPENDENT GATE OPERATION; SENSE-AMPLIFIERS;

MOSFET DEVICES; ROBUSTNESS (CONTROL SYSTEMS); SILICON; TRANSISTORS;

AMPLIFIERS (ELECTRONIC);

EID: 33644998470     PISSN: 10638210     EISSN: None     Source Type: Journal    
DOI: 10.1109/TVLSI.2005.863743     Document Type: Article

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