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Volumn 50, Issue 7-8, 2006, Pages 1276-1282

An explicit analytical charge-based model of undoped independent double gate MOSFET

Author keywords

Charge based model; Explicit analytical modeling; Independent double gate MOSFET

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRIC CHARGE; MATHEMATICAL MODELS; PARAMETER ESTIMATION; POISSON EQUATION;

EID: 33747177561     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.05.019     Document Type: Article
Times cited : (29)

References (10)
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  • 2
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    • Monte Carlo simulation of a 30-nm dual-gate MOSFET: How far can silicon go?
    • Frank D. Monte Carlo simulation of a 30-nm dual-gate MOSFET: How far can silicon go?. IEDM Tech Dig (1992) 553
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    • Frank, D.1
  • 3
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    • Analytical solutions of charge and capacitance in symmetric and asymmetric DG MOSFET
    • Taur Y. Analytical solutions of charge and capacitance in symmetric and asymmetric DG MOSFET. IEEE Trans Electron Dev 48 12 (2001)
    • (2001) IEEE Trans Electron Dev , vol.48 , Issue.12
    • Taur, Y.1
  • 4
    • 84942524757 scopus 로고    scopus 로고
    • Kammula AV. A long channel model for the asymmetric DG MOSFET valid in all regions of operation. In: IEEE Southwest symposium mixed-signal design; 2003. p. 156-61.
  • 5
    • 33747173205 scopus 로고    scopus 로고
    • Improved compact modeling for four-terminal DG MOSFETs
    • Nakagawa, et al. Improved compact modeling for four-terminal DG MOSFETs. NSTI Nanotech (2004)
    • (2004) NSTI Nanotech
    • Nakagawa1
  • 6
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    • Quasi-2D compact modeling for DG MOSFET
    • Chan M. Quasi-2D compact modeling for DG MOSFET. NSTI Nanotech 2 (2004) 108-113
    • (2004) NSTI Nanotech , vol.2 , pp. 108-113
    • Chan, M.1
  • 7
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    • ATLAS user's manual - device simulation software, SILVACO International In.
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  • 9
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    • Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs
    • Ge L., and Fossum J.G. Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs. IEEE Trans Electron Dev 49 2 (2002)
    • (2002) IEEE Trans Electron Dev , vol.49 , Issue.2
    • Ge, L.1    Fossum, J.G.2
  • 10
    • 4444270647 scopus 로고    scopus 로고
    • A 2-D analytical solution for SCEs in DG MOSFETs
    • Liang X., et al. A 2-D analytical solution for SCEs in DG MOSFETs. IEEE Trans Electron Dev 51 8 (2004)
    • (2004) IEEE Trans Electron Dev , vol.51 , Issue.8
    • Liang, X.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.