A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Zhang, Jian ^a   Zhang, Lining ^a   He, Jin ^a   Chan, Mansun ^b  

^a PEKING UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL SOLUTIONS; CHANNEL DYNAMICS; CHANNEL POTENTIAL; COMPACT MODEL; DEVICE OPERATIONS; DEVICE PHYSICS; DRAIN CURRENT MODELS; GEOMETRICAL STRUCTURE; INTERFACE ANALYSIS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; POISSON-BOLTZMANN EQUATIONS; SILICON ON INSULATOR; SILICON-ON-INSULATORS; SOI-MOSFETS; STRONG INVERSION; TWO-DIMENSIONAL NUMERICAL SIMULATION; UNIVERSAL SOLUTIONS;

BOLTZMANN EQUATION; COMPUTER SIMULATION; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; ION BEAMS; MICROSENSORS; MOSFET DEVICES; PAPER SHEETING; POISSON EQUATION; SEMICONDUCTING SILICON; SHEET METAL;

DRAIN CURRENT;

EID: 77949727783     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3319656     Document Type: Article

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