Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

IEEE Electron Device Letters

Volumn 21, Issue 9, 2000, Pages 397-399

  Oh, Sang Hyun ^a   Monroe, Don ^a   Hergenrother, J M ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTROSTATICS;

ELECTROSTATIC POTENTIALS; EVANESCENT-MODE ANALYSIS; SHORT-CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0034258881     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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9. J. D. Jackson, Classical Electrodynamics. New York: Wiley, 1975, ch. 3.
10. C. P. Auth and J. D. Plummer, "Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFETs," IEEE Electron Device Lett., vol. 18, pp. 74-76, Feb. 1997.