Generic carrier-based core model for undoped four-terminal double-gate MOSFETs valid for symmetric, asymmetric, and independent-gate-operation modes

IEEE Transactions on Electron Devices

Volumn 55, Issue 3, 2008, Pages 816-826

  Liu, Feng ^a   He, Jin ^a   Fu, Yue ^a   Hu, Jinhua ^a   Bian, Wei ^a   Song, Yan ^a   Xing, Zhang ^a   Chan, Mansun ^b  

^a PEKING UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Carriear based model; Circuit simulation and design; Compact modeling; Double gate (DG) MOSFET; Nonclassical device

Indexed keywords

CIRCUIT SIMULATION; DRAIN CURRENT; INTEGRAL EQUATIONS; MATHEMATICAL MODELS; POISSON EQUATION;

CARRIER-BASED CORE MODEL; CHANNEL CARRIERS;

MOSFET DEVICES;

EID: 40949083539     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.914836     Document Type: Article

References (29)

1. D. J. Frank, R. H. Dennard, E. Nowak, P. M. Solomon, Y. Taur, and H. S. P. Wong, "Device scaling limits of Si MOSFETs and their application dependencies," in Proc. IEEE, 2001, vol. 89, no. 3, pp. 259-288, Mar. 2001.
2. K. Kim and J. G. Fossum, "Double-gate CMOS: Symmetrical-versus asymmetrical-gate devices," IEEE Trans. Electron Devices, vol. 48, no. 2, pp. 294-299, Feb. 2001.
3. J. P. Colinge, "Novel gate concepts for MOS device," in Proc. 34th Eur. Solid-State Device Res. Conf. ESSDERC, 2004, pp. 45-49.
4. Y. Taur, "An analytical solution to a double-gate MOSFET with undoped body," IEEE Electron Device Lett., vol. 21, no. 5, pp. 245-247, May 2000.
5. Y. Taur, "Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs," IEEE Trans. Electron Devices, vol. 48, no. 12, pp. 2861-2869, Dec. 2001.
6. A. Oritiz-Conde, F. J. Garcia-Sonchez, and S. Malobabic, "Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs," IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1669-1672, Jul. 2005.
7. Y. Taur, X. Liang, W. Wang, and H. Lu, "A continuous, analytic drain-current model for DG MOSFETs," IEEE Electron Device Lett., vol. 25, no. 2, pp. 107-109, Feb. 2004.
8. A. Ortiz-Conde, F. J. García-Sánchez, and J. Muci, "Rigorous analytic solution for the drain-current of undoped symmetric dual-gate MOSFETs," Solid-State Electron., vol. 49, no. 4, pp. 640-647, Apr. 2005.
9. J. He, X. Xi, C. H. Lin, M. Chan, A. Niknejad, and C. Hu, "A noncharge-sheet analytic theory for undoped symmetric double-gate MOSFET from the exact solution of Poisson's equation using SSP approach," in Proc. Workshop Compact Model., NSTI-Nanotech, Boston, MA, 2004, pp. 124-127.
10. J. He, F. Liu, J. Zhang, J. Feng, J. Hu, S. Yang, and M. Chan, "A carrier-based approach for compact modeling of the long-channel undoped symmetric double-gate MOSFETs," IEEE Trans. Electron Devices, vol. 54, no. 5, pp. 1203-1209, May 2007.
11. J. M. Sallese, F. Krummenacher, F. Pregaldiny, C. Lallement, A. Roy, and C. Enz, "A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism," Solid-State Electron., vol. 49, no. 3, pp. 485-489, Mar. 2005.
12. G. Pei, W. Ni, A. V. Kammula, B. A. Minch, and E. C. -C. Kan, "A physical compact model of DG MOSFET for mixed-signal circuit applications - Part I: Model description," IEEE Trans. Electron Devices, vol. 50, no. 10, pp. 2135-2143, Oct. 2003.
13. M. Reyboz, O. Rozeau, T. Poiroux, P. Martin, and J. Jomaah, "An explicit analytical charge-based model of undoped independent double gate MOSFET," Solid-State Electron., vol. 50, no. 1, pp. 1276-1282, Jan. 2006.
14. A. S. Roy, J.-M. Sallese, and C. C. Enz, "A closed-form charge-based expression for drain-current in symmetric and asymmetric double gate MOSFET," Solid-State Electron., vol. 50, no. 4, pp. 687-693, Apr. 2006.
15. A. Ortize-Conde and F. J. Garcia-Sanchez, "Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current," Solid-State Electron., vol. 50, no. 11/12, pp. 1796-1800, Nov./Dec. 2006.
16. A. Ortiz-Conde, F. J. García-Sánchez, S. Malobabic, J. Muci, and R. Salazar, "Drain-current and transconductance model for the undoped body asymmetric double-gate MOSFET," in Proc. 8th Int. Conf. Solid-State Integr.-Circuit Technol., Shanghai, China, Oct. 2006, pp. 1239-1242.
17. A. Ortiz-Conde, F. J. García-Sánchez, J. Muci, S. Malobabic, and J. J. Liou, "A review of core compact models for undoped double gate SOI MOSFETs," IEEE Trans. Electron Devices, vol. 54, no. 1, pp. 131-141, Jan. 2007.
18. H. Lu and Y. Taur, "An analytic potential model for symmetric and asymmetric DG MOSFETs," IEEE Trans. Electron Devices, vol. 53, no. 5, pp. 1161-1168, May 2006.
19. J. G. Fossum, L. Ge, M. H. Chiang, V. P. Trivedi, M. M. Chowdhury, L. Mathew, G. O. Workman, and B. Y. Nguyen, "A process/physics-based compact model for nonclassical CMOS device and circuit design," Solid-State Electron., vol. 48, no. 6, pp. 919-926, Jun. 2004.
20. W. Zhang, J. G. Fossum, L. Mathew, and Y. Du, "Physical insights regarding design and performance of independent-gate FinFETs," IEEE Trans. Electron Devices, vol. 52, no. 10, pp. 2198-2206, Oct. 2005.
21. J. G. Fossum, V. P. Trivedi, M. M. Chowdhury, S.-H. Kim, and W. Zhang, "Recent upgrades and applications of UFDG," in Proc. Workshop Compact Model, NSTI-Nanotech, May 2006, pp. 674-679.
22. J. He, M. Chan, G. Zhang, X. Zhang, and Y. Wang, "A continuous analytic I-V model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach," Semicond. Sci. Technol., vol. 21, no. 3, pp. 261-266, May 2006.
23. J. He, X. Zhang, G. Zhang, M. Chan, and Y. Wang, "A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs," Solid-State Electron., vol. 50, no. 3, pp. 416-421, May 2006.
24. BSIM Model, Berkeley Short-Channel IGFET Model. Online. Available: http://www.eecs.berkeley.edu/device/bsim3
25. X. Shi and M. Wong, "Analytical solutions to the one-dimensional oxide-silicon-oxide system," IEEE Trans. Electron Devices, vol. 50, no. 8, pp. 1793-1800, Aug. 2003.
26. H. C. Pao and C. T. Sah, "Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors," Solid-State Electron., vol. 9, no. 10, pp. 927-937, Oct. 1966.
27. A. Ortiz-Conde, R. Herrera, P. E. Schmidt, F. J. García-Sánchez, and J. Andrian, "Long channel silicon on insulator MOSFET theory," Solid-State Electron., vol. 35, no. 7, pp. 1291-1298, Sep. 1992.
28. A. Ortiz-Conde, F. J. García-Sánchez, J. Muci, and S. Malobabic, "A general analytical solution to the one-dimensional undoped oxied-silicon-oxide system," in Proc. 6th Int. Caribbean Conf. Device, Circuits Syst., Apr. 2006, pp. 177-182.
29. ULTRAS-DG. [Online]. Available by both a requirement and website: http://ime.pku.edu.cn/nano/