Flexible Threshold Voltage FinFETs with Independent Double Gates and an Ideal Rectangular Cross-Section Si-Fin Channel

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 986-988

  Liu, Y X ^a   Masahara, M ^a   Ishii, K ^a   Tsutsumi, T ^a   Sekigawa, T ^a   Takashima, H ^a   Yamauchi, H ^a   Suzuki, E ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; ELECTRODES; GATES (TRANSISTOR); LITHOGRAPHY; MOSFET DEVICES; NITRIDES; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SYNCHRONIZATION; THRESHOLD VOLTAGE; VLSI CIRCUITS;

GATE LENGTH; SHORT CHANNEL EFFECTS (SCE);

FIELD EFFECT TRANSISTORS;

EID: 0842288130     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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