Surface-potential solution for generic undoped MOSFETs with two gates

IEEE Transactions on Electron Devices

Volumn 54, Issue 1, 2007, Pages 169-172

  Shangguan, W Z ^a   Zhou, Xing ^a   Chandrasekaran, Karthik ^a,b   Zhu, Zhaomin ^a   Rustagi, Subhash C ^c   Chiah, Siau Ben ^a   See, Guan Huei ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b ADVANCED MICRO DEVICES   (United States)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Compact modeling; MOSFET; Silicon on insulator (SOI); Surface potential; Symmetric and asymmetric double gate (s DG and a DG)

Indexed keywords

APPROXIMATION THEORY; BOUNDARY CONDITIONS; GATES (TRANSISTOR); ITERATIVE METHODS; MATHEMATICAL MODELS; POISSON EQUATION; SILICON ON INSULATOR TECHNOLOGY;

COMPACT MODELING; DOUBLE GATE; NEWTON-RAPHSON METHOD; SURFACE POTENTIAL;

MOSFET DEVICES;

EID: 33846116975     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.887518     Document Type: Article

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