Continuous model for independent double gate MOSFET

Solid-State Electronics

Volumn 53, Issue 5, 2009, Pages 504-513

  Reyboz, M ^a   Martin, P ^a   Poiroux, T ^a   Rozeau, O ^a  

^a CEA LETI   (France)

Author keywords

Asymmetrical and independent double gate MOSFET; Charge model; Compact model; Mobility model; Short channel effects; Symmetrical

Indexed keywords

ASYMMETRICAL AND INDEPENDENT DOUBLE GATE MOSFET; CHARGE MODEL; COMPACT MODEL; MOBILITY MODEL; SHORT CHANNEL EFFECTS; SYMMETRICAL;

FIELD EFFECT TRANSISTORS; OPTICAL FILTERS; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 65049090425     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.02.005     Document Type: Article

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