-
3
-
-
0029701860
-
-
P. Kinget and M. Steyaert, Impact of transistor mismatch on the speed-accuracy-power tradeoff of analog CMOS circuits, in Proc. IEEE Custom Integr. Circuits Conf., May 1996, pp. 15.4.1-15.4.4.
-
P. Kinget and M. Steyaert, "Impact of transistor mismatch on the speed-accuracy-power tradeoff of analog CMOS circuits," in Proc. IEEE Custom Integr. Circuits Conf., May 1996, pp. 15.4.1-15.4.4.
-
-
-
-
4
-
-
0028548950
-
Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs
-
Nov
-
T. Mizuno, J. Okumtura, and A. Toriumi, "Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 2216-2221, Nov. 1994.
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, Issue.11
, pp. 2216-2221
-
-
Mizuno, T.1
Okumtura, J.2
Toriumi, A.3
-
5
-
-
0035445204
-
A study of the threshold voltage variation for ultra-small bulk and SOI CMOS
-
Sep
-
K. Takeuchi, R. Koh, and T. Mogami, "A study of the threshold voltage variation for ultra-small bulk and SOI CMOS," IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 1995-2001, Sep. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.9
, pp. 1995-2001
-
-
Takeuchi, K.1
Koh, R.2
Mogami, T.3
-
6
-
-
10644230219
-
Fabrication of metal gated FinFETs through complete gate silicidation with Ni
-
Dec
-
J. Kedzierski et al., "Fabrication of metal gated FinFETs through complete gate silicidation with Ni," IEEE Trans. Electron Devices vol. 51, no. 12, pp. 2115-2120, Dec. 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.12
, pp. 2115-2120
-
-
Kedzierski, J.1
-
8
-
-
34250658542
-
Analog circuits using FinFETs: Benefits in speed-accuracy-power tradeoff and simulation of parasitic effects
-
M. Fulde et al., "Analog circuits using FinFETs: Benefits in speed-accuracy-power tradeoff and simulation of parasitic effects," Adv. Radio Sci., vol. 5, pp. 285-290, 2007.
-
(2007)
Adv. Radio Sci
, vol.5
, pp. 285-290
-
-
Fulde, M.1
-
9
-
-
33744760140
-
Design and evaluation of basic analog circuits in an emerging MuGFET technology
-
Oct
-
G. Knoblinger et al., "Design and evaluation of basic analog circuits in an emerging MuGFET technology," in Proc. IEEE Int. SOI Conf., Oct. 2005, pp. 39-40.
-
(2005)
Proc. IEEE Int. SOI Conf
, pp. 39-40
-
-
Knoblinger, G.1
-
10
-
-
37649030925
-
Suitability of FinFET technology for low-power mixed-signal applications
-
May
-
B. Parvais et al., "Suitability of FinFET technology for low-power mixed-signal applications," in Proc. Int. Conf. Integr. Circuit Des. Technol., May 2006, pp. 1-4.
-
(2006)
Proc. Int. Conf. Integr. Circuit Des. Technol
, pp. 1-4
-
-
Parvais, B.1
-
11
-
-
33947243464
-
Planar bulk MOSFETs versus FinFETs: An analog/RF perspective
-
Dec
-
V. Subramanian et al., "Planar bulk MOSFETs versus FinFETs: An analog/RF perspective," IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 3071-3079, Dec. 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.12
, pp. 3071-3079
-
-
Subramanian, V.1
-
12
-
-
1842865629
-
Turning silicon on its edge
-
Jan./Feb
-
E. J. Nowak et al., "Turning silicon on its edge," IEEE Circuits Devices Mag., vol. 20, no. 1, pp. 20-31, Jan./Feb. 2004.
-
(2004)
IEEE Circuits Devices Mag
, vol.20
, Issue.1
, pp. 20-31
-
-
Nowak, E.J.1
-
13
-
-
0028756972
-
Design and performance considerations for sub-0.1 μm double-gate SOI MOSFETs
-
Dec
-
H.-S. Wong, D. J. Frank, T. Yuan, and J. M. C. Stork, "Design and performance considerations for sub-0.1 μm double-gate SOI MOSFETs," in IEDM Tech. Dig., Dec. 1994, pp. 747-750.
-
(1994)
IEDM Tech. Dig
, pp. 747-750
-
-
Wong, H.-S.1
Frank, D.J.2
Yuan, T.3
Stork, J.M.C.4
-
14
-
-
34547350738
-
Width quantization aware FinFET circuit design
-
Sep
-
J. Gu, J. Keane, S. Sapatnekar, and C. Kim, "Width quantization aware FinFET circuit design," in Proc. IEEE Custom Integr. Circuits Conf. Sep. 2006, pp. 337-340.
-
(2006)
Proc. IEEE Custom Integr. Circuits Conf
, pp. 337-340
-
-
Gu, J.1
Keane, J.2
Sapatnekar, S.3
Kim, C.4
-
15
-
-
10644271735
-
Independently driven DG MOSFETs for mixed-signal circuits: Part I - Quasi-static and nonquasi-static channel coupling
-
Feb
-
G. Pei and E. C.-C. Kan, "Independently driven DG MOSFETs for mixed-signal circuits: Part I - Quasi-static and nonquasi-static channel coupling," IEEE Trans. Electron Devices, vol. 51, no. 12, pp. 2086-2093, Feb. 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.12
, pp. 2086-2093
-
-
Pei, G.1
Kan, E.C.-C.2
-
16
-
-
33947421763
-
Physical insights regarding design and performance of independent-gate FinFETs
-
Oct
-
W. Zhang, J. G. Fossum, L. Mathew, and Y. Du, "Physical insights regarding design and performance of independent-gate FinFETs," IEEE Trans. Electron Devices, vol. 52, no. 10, pp. 2198-2206, Oct. 2005.
-
(2005)
IEEE Trans. Electron Devices
, vol.52
, Issue.10
, pp. 2198-2206
-
-
Zhang, W.1
Fossum, J.G.2
Mathew, L.3
Du, Y.4
-
17
-
-
10644228697
-
Independently driven DG MOSFETs for mixed-signal circuits: Part II - Applications on cross-coupled feedback and harmonics generation
-
Feb
-
G. Pei and E. C.-C. Kan, "Independently driven DG MOSFETs for mixed-signal circuits: Part II - Applications on cross-coupled feedback and harmonics generation," IEEE Trans. Electron Devices, vol. 51, no. 12, pp. 2094-2101, Feb. 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.12
, pp. 2094-2101
-
-
Pei, G.1
Kan, E.C.-C.2
-
18
-
-
0842288130
-
Flexible threshold voltage FinFETs with independent double gates and an ideal rectangular cross-section Si-Fin channel
-
Washington, DC, Dec
-
Y. X. Liu et al., "Flexible threshold voltage FinFETs with independent double gates and an ideal rectangular cross-section Si-Fin channel," in IEDM Tech. Dig., Washington, DC, Dec. 2003, pp. 986-988.
-
(2003)
IEDM Tech. Dig
, pp. 986-988
-
-
Liu, Y.X.1
-
19
-
-
26444580190
-
Power-area evaluation of various double-gate RF mixer topologies
-
Sep
-
M. V. Rammohan Reddy, D. K. Sharma, M. B. Patil, and V. Ramgopal Rao, "Power-area evaluation of various double-gate RF mixer topologies," IEEE Electron Device Lett., vol. 26, no. 9, pp. 664-666, Sep. 2005.
-
(2005)
IEEE Electron Device Lett
, vol.26
, Issue.9
, pp. 664-666
-
-
Rammohan Reddy, M.V.1
Sharma, D.K.2
Patil, M.B.3
Ramgopal Rao, V.4
-
20
-
-
20144387099
-
CMOS vertical multiple independent gate field effect transistor
-
Oct
-
L. Mathew et al., "CMOS vertical multiple independent gate field effect transistor," in Proc. IEEE Int. SOI Conf., Oct. 2004, pp. 187-189.
-
(2004)
Proc. IEEE Int. SOI Conf
, pp. 187-189
-
-
Mathew, L.1
-
21
-
-
16244383181
-
Low voltage and performance tunable CMOS circuit design using independently driven double gate MOSFETs
-
Oct
-
A. Kumar et al., "Low voltage and performance tunable CMOS circuit design using independently driven double gate MOSFETs," in Proc. IEEE Int. SOI Conf., Oct. 2004, pp. 119-121.
-
(2004)
Proc. IEEE Int. SOI Conf
, pp. 119-121
-
-
Kumar, A.1
-
22
-
-
39749142331
-
Device design and optimization considerations for bulk FinFETs
-
Feb
-
C. R. Manoj, M. Nagpal, D. Varghese, and V. Ramgopal Rao, "Device design and optimization considerations for bulk FinFETs," IEEE Trans. Electron Devices, vol. 55, no. 2, pp. 609-615, Feb. 2008.
-
(2008)
IEEE Trans. Electron Devices
, vol.55
, Issue.2
, pp. 609-615
-
-
Manoj, C.R.1
Nagpal, M.2
Varghese, D.3
Ramgopal Rao, V.4
-
23
-
-
37549053754
-
Impact of high-k gate dielectrics on the device and circuit performance of nanoscale FinFETs
-
Apr
-
C. R. Manoj and V. Ramgopal Rao, "Impact of high-k gate dielectrics on the device and circuit performance of nanoscale FinFETs," IEEE Electron Device Lett., vol. 28, no. 4, pp. 295-297, Apr. 2007.
-
(2007)
IEEE Electron Device Lett
, vol.28
, Issue.4
, pp. 295-297
-
-
Manoj, C.R.1
Ramgopal Rao, V.2
-
24
-
-
56549083876
-
-
Sentaurus Structure Editor, Synopsys Inc., Mountain View, CA, Mar. 2007. Version Z-2007.03.
-
Sentaurus Structure Editor, Synopsys Inc., Mountain View, CA, Mar. 2007. Version Z-2007.03.
-
-
-
-
25
-
-
0242332710
-
Sensitivity of double-gate and FinFET devices to process variations
-
Nov
-
S. Xiong and J. Bokor, "Sensitivity of double-gate and FinFET devices to process variations," IEEE Trans. Electron Devices, vol. 50, no. 11, pp. 2255-2261, Nov. 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, Issue.11
, pp. 2255-2261
-
-
Xiong, S.1
Bokor, J.2
-
26
-
-
56549104548
-
-
Sentaurus Device User Guide, Synopsys Inc., Mountain View, CA, Mar. 2007. Version Z-2007.03.
-
Sentaurus Device User Guide, Synopsys Inc., Mountain View, CA, Mar. 2007. Version Z-2007.03.
-
-
-
-
27
-
-
19944418823
-
2 and SiON gate dielectrics and TaN gate electrode
-
Jun
-
2 and SiON gate dielectrics and TaN gate electrode," Microelectron. Eng., vol. 80, pp. 386-389, Jun. 2005.
-
(2005)
Microelectron. Eng
, vol.80
, pp. 386-389
-
-
Rudenko, T.1
-
28
-
-
34548542251
-
Analog and RF circuits in 45 nm CMOS and below: Planar bulk versus FinFET
-
Sep
-
P. Wambacq, B. Verbruggen, K. Scheir, J. Borremans, V. De. Heyn, G. Vander Plas, A. Mercha, B. Parvais, V. Subramanian, M. Jurczak, S. Decoutere, and S. Donnay, "Analog and RF circuits in 45 nm CMOS and below: Planar bulk versus FinFET," in Proc. 36th ESSDERC, Sep. 2006, pp. 53-56.
-
(2006)
Proc. 36th ESSDERC
, pp. 53-56
-
-
Wambacq, P.1
Verbruggen, B.2
Scheir, K.3
Borremans, J.4
Heyn, V.D.5
Vander Plas, G.6
Mercha, A.7
Parvais, B.8
Subramanian, V.9
Jurczak, M.10
Decoutere, S.11
Donnay, S.12
-
29
-
-
33847146337
-
GSM receiver front-end in 65 nm digital CMOS process
-
A. See, T. Lee, and S. Peng, "GSM receiver front-end in 65 nm digital CMOS process," in Proc. IEEE Custom Integr. Circuits Conf., 2005, pp. 349-352.
-
(2005)
Proc. IEEE Custom Integr. Circuits Conf
, pp. 349-352
-
-
See, A.1
Lee, T.2
Peng, S.3
-
30
-
-
33750592946
-
DTMOS technique for low-voltage analog circuits
-
Oct
-
M. Maymandi-Nejad and M. Sachdev, "DTMOS technique for low-voltage analog circuits," IEEE Trans. Very Large Scale Integr. (VLSI) Syst. vol. 14, no. 10, pp. 1151-1156, Oct. 2006.
-
(2006)
IEEE Trans. Very Large Scale Integr. (VLSI) Syst
, vol.14
, Issue.10
, pp. 1151-1156
-
-
Maymandi-Nejad, M.1
Sachdev, M.2
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