A non-charge-sheet analytic model for symmetric double-gate MOSFETs with smooth transition between partially and fully depleted operation modes

IEEE Transactions on Electron Devices

Volumn 55, Issue 12, 2008, Pages 3494-3502

  Liu, Feng ^a,b   He, Jin ^a   Zhang, Jian ^a   Chen, Yu ^a   Chan, Mansun ^b  

^a PEKING UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Compact model; Double gate (DG) MOSFET; Fully depleted (FD); Non charge sheet current; Partially depleted (PD)

Indexed keywords

CIRCUIT SIMULATION; DOPING (ADDITIVES); DRAIN CURRENT; FINITE DIFFERENCE METHOD; GALERKIN METHODS; PAPER SHEETING; POISSON EQUATION; POWDERS;

COMPACT MODEL; DOUBLE-GATE (DG) MOSFET; FULLY DEPLETED (FD); NON-CHARGE-SHEET CURRENT; PARTIALLY DEPLETED (PD);

MOSFET DEVICES;

EID: 57149132530     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2006544     Document Type: Article

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