Universal potential model in tied and separated double-gate MOSFETs with consideration of symmetric and asymmetric structure

IEEE Transactions on Electron Devices

Volumn 55, Issue 6, 2008, Pages 1472-1479

  Han, Jin Woo ^a   Kim, Chung Jin ^a   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

2 D Poisson's equation; Asymmetric double gate; Back gate effects; Separated double gate; Symmetric double gate; Threshold voltage; Tied double gate; Universal analytical potential model

Indexed keywords

APPROXIMATION THEORY; GATES (TRANSISTOR); POISSON EQUATION; THRESHOLD VOLTAGE; TWO DIMENSIONAL;

ASYMMETRIC DOUBLE GATE; BACK-GATE EFFECTS; DOUBLE-GATE MOSFETS; SEPARATED DOUBLE GATE; SYMMETRIC DOUBLE GATE; TIED DOUBLE GATE;

MOSFET DEVICES;

EID: 44949152690     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.922492     Document Type: Article

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