Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current

Solid-State Electronics

Volumn 50, Issue 11-12, 2006, Pages 1796-1800

  Ortiz Conde, Adelmo ^a   García Sánchez, Francisco J ^a  

^a UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

Author keywords

Asymmetric; Charge based; DG; Double gate; MOSFET; Surface potential based; Symmetric; Undoped

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); SILICON;

SURFACE POTENTIAL; SYMMETRIC DOUBLE GATE; SYMMETRIC DOUBLE GATE (DG);

MOSFET DEVICES;

EID: 33751234993     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.10.003     Document Type: Article

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