A physical compact model of DG MOSFET for mixed-signal circuit applications - Part I: Model description

IEEE Transactions on Electron Devices

Volumn 50, Issue 10, 2003, Pages 2135-2143

  Pei, Cen ^a   Ni, Weiping ^a   Kammula, Abhishek V ^a   Minch, Bradley A ^a   Kan, Edwin Chih Chuan ^a  

^a Cornell University   (United States)

Author keywords

Compact model; Double gate MOSFET; Mixed signal

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE MEASUREMENT; GATES (TRANSISTOR); MIXER CIRCUITS; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS;

CARRIER SCREENING FUNCTIONS; DOUBLE GATE TRANSISTOR; DRAIN INDUCED BARRIER LOWERING; PHYSICAL COMPACT MODEL;

MOSFET DEVICES;

EID: 0141940281     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.817481     Document Type: Article

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