Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

Journal of Physics D: Applied Physics

Volumn 43, Issue 36, 2010, Pages

  Sakalauskas, E ^a   Behmenburg, H ^b,c   Hums, C ^d   Schley, P ^a   Rossbach, G ^a   Giesen, C ^b   Heuken, M ^b,c   Kalisch, H ^c   Jansen, R H ^c   Blasing J ^d   Dadgar, A ^d   Krost, A ^d   Goldhahn, R ^a,d  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b AIXTRON AG   (Germany)

^c RWTH AACHEN UNIVERSITY   (Germany)

^d OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY FILM; BOWING PARAMETERS; BRILLOUIN ZONES; COMPLEX DIELECTRIC FUNCTIONS; COMPOSITIONAL DEPENDENCE; CRITICAL POINTS; CRYSTALLINE QUALITY; DATA ANALYSIS; DIELECTRIC FUNCTIONS; DIRECT ABSORPTION; EXCITON-BINDING ENERGY; EXPERIMENTAL DATA; GAN BUFFER; HIGH RESOLUTION X RAY DIFFRACTION; HIGH-FREQUENCY DIELECTRICS; IMAGINARY PARTS; LATTICE-MATCHED; METAL-ORGANIC VAPOUR PHASE EPITAXY; PHOTON ENERGY RANGE; PLAIN STRAIN; PSEUDOMORPHIC GROWTH; SI (1 1 1); SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS; TRANSITION ENERGY;

ALUMINUM; BAND STRUCTURE; BINDING ENERGY; DATA REDUCTION; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MULTIPHOTON PROCESSES; OPTICAL PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 78249238810     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/36/365102     Document Type: Article

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