Growth of high-In-content InAlN nanocolumns on Si (1 1 1) by RF-plasma-assisted molecular-beam epitaxy

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 160-163

  Kamimura, Jumpei ^a   Kouno, Tetsuya ^a   Ishizawa, Shunsuke ^a,b   Kikuchi, Akihiko ^a,b   Kishino, Katsumi ^a,b  

^a SOPHIA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Photoluminescence; B1. AlN; B1. InA1N; B1. InN; B1. Nanocolumn; B1. Nanorod

Indexed keywords

ALUMINUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SILICON;

C-AXIS ORIENTATION; NANOCOLUMN; RF-PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY; ROOM-TEMPERATURE;

CRYSTAL GROWTH;

EID: 33847266191     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.029     Document Type: Article

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