Band gap bowing parameter of In1-x Alx N

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Jones, R E ^a,b   Broesler, R ^a,b   Yu, K M ^a   Ager, J W ^a   Haller, E E ^a,b   Walukiewicz, W ^a   Chen, X ^c   Schaff, W J ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

^c Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ENERGY GAP; GALLIUM ALLOYS; INDIUM; SEMICONDUCTOR MATERIALS;

ABSORPTION EDGES; ALLOY COMPOSITIONS; BAND GAPS; BURSTEIN; HIGH QUALITIES; NONPARABOLIC CONDUCTIONS; OPTICAL ABSORPTIONS; RUTHERFORD BACKSCATTERINGS; SAMPLE QUALITIES; X-RAY DIFFRACTIONS;

RUTHERFORD BACKSCATTERING SPECTROSCOPY;

EID: 58149251885     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3039509     Document Type: Article

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