Improved light output of nitride-based light-emitting diodes by lattice-matched AlInN cladding structure

IEEE Photonics Technology Letters

Volumn 20, Issue 12, 2008, Pages 970-972

  Cheng, An Ting ^a   Su, Yan Kuin ^a   Lai, Wei Chi ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

AlInN; Lattice mismatch; Light emitting diode (LED)

Indexed keywords

LATTICE MISMATCH; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; WAVELENGTH; X RAY DIFFRACTION ANALYSIS;

EMISSION WAVELENGTH; LIGHT OUTPUT INTENSITY; PHOTOLUMINESCENCE SPECTRA;

LIGHT EMITTING DIODES;

EID: 44849138172     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.922937     Document Type: Article

References (18)

1. I. Akasaki, "Progress in crystal growth and future prospects of group III nitrides by metalorganic vapor-phase epitaxy," J. Cryst. Growth vol. 195, pp. 248-251, 1998.
2. S. Nakamura, "The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes," Science, vol. 281, pp. 956-961, 1998.
3. K. Kumakura, T. Makimoto, and N. Kobayashi, "Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field," Jpn. J. Appl. Phys., vol. 39, pp. 2428-2430, 2000.
4. S. Nakamura, "A bright future for blue/green LEDs," IEEE Circuits Devices Mag., vol. 11, no. 3, pp. 19-23, May 1995.
5. 0.9N-ITO structure," IEEE Photon. Technol. Lett., vol. 16, no. 8, pp. 1807-1809, Aug. 2004.
6. M. K. Kwon, I. K. Park, S. H. Baek, J. Y. Kim, and S. J. Park, "Si delta doping in a GaN barrier layer of InGaN/GaN multiquantum well for an efficient ultraviolet light-emitting diode," J. Appl. Phys., vol. 97, pp. 106109-1-106109-3, 2005.
7. J. Han, K. E. Waldrip, S. R. Lee, J. J. Figiel, S. J. Hearne, G. A. Petersen, and S. M. Myers, "Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers," Appl. Phys. Lett. vol. 78, no. 1, pp. 67-69, 2001.
8. J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, G. Simin, and M. A. Khan, "Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management," Appl. Phys. Lett., vol. 80, no. 19, pp. 3542-3544, 2002.
9. J.-F. Carlin and M. Ilegems, "High-quality AlInN for high index contrast bragg mirrors lattice matched to GaN," Appl. Phys. Lett. vol. 83, no. 4, pp. 668-670, 2003.
10. S. Y. Karpov, N. I. Podolskaya, I. A. Zhmakin, and A. I. Zhmakin, "Statistical model of ternary group-III nitrides," Phys. Rev. B, vol. 70, pp. 235203-1, 2004.
11. C. Hums, J. Bläsing, A. Dadgar, A. Diez, T. Hempel, J. Christen, A. Krost, K. Lorenz, and E. Alves, "Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range," Appl. Phys. Lett., vol. 90, pp. 022105-1-022105-3, 2007.
12. M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, and N. Grandjean, "High electron mobility lattice-matched A1InN/GaN field-effect transistor heterostructures," Appl. Phys. Lett., vol. 89, pp. 062106-1-062106-3, 2006.
13. A. Castiglia, D. Simeonov, H. J. Buehlmann, J.-F. Carlin, E. Feltin, J. Dorsaz, R. Butté, and N. Grandjean, "Efficient current injection scheme for nitride vertical cavity surface emitting lasers," Appl. Phys. Lett., vol. 90, pp. 033514-1-033514-3, 2007.
14. 1-xN/GaN heterostructures by molecular beam epitaxy," Appl. Phys. Lett., vol. 90, pp. 021922-1-021922-3, 2007.
15. T. Takeuchi, C. Wetze1, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada, "Determination of piezoelectric fields in strained gainn quantum wells using the quantum-confined Stark effect," Appl. Phys. Lett., vol. 73, no. 12, pp. 1691-1693, 1998.
16. N. Nanhui, W. Huaibing, L. Jianping, L. Naixin, X. Yanhui, H. Jun, D. Jim, and S. Guangdi, "Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction," Solid-State Electron., vol. 51, pp. 860-864, 2007.
17. M. Razeghi and M. Henini, Optoelectronic Devices: III-Nitrides. New York: Elsever; 2005, p. 229.
18. 0.96N p-layers on the electrical and electro-luminescence properties of green light emitting diodes," J. Electron. Mater., vol. 36, no. 4, pp. 426-430, 2007.