MOVPE growth and characterization of AlInN FET structures on Si(111)

Materials Research Society Symposium Proceedings

Volumn 1068, Issue , 2008, Pages 45-50

  Hums, Christoph ^a   Gadanecz, Aniko ^a   Dadgar, Armin ^a   Blasing, Jürgen ^a   Witte, Hartmut ^a   Hempel, Thomas ^a   Dietz, Annette ^a   Lorenz, Pierre ^b   Krischok, Stefan ^b   Schaefer, Jürgen Alois ^b   Christen, Jürgen ^a   Krost, Alois ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; GALLIUM ARSENIDE; GALLIUM NITRIDE; HOLE CONCENTRATION; III-V SEMICONDUCTORS; INDIUM; ISOMERS; PHASE INTERFACES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR ALLOYS; SILICON ALLOYS; SILICON CARBIDE; SUBSTRATES;

COMPOSITIONAL RANGE; CRITICAL LAYER THICKNESS; FIELD EFFECTS TRANSISTORS; GROWTH CONDITIONS; INDIUM CONCENTRATION; SAMPLE MORPHOLOGY; THEORETICAL CALCULATIONS; TWO-DIMENSIONAL HOLE GAS;

GALLIUM ALLOYS;

EID: 57649110263     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1068-c04-03     Document Type: Conference Paper

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