Critical points of the band structure and valence band ordering at the Γ point of wurtzite InN

Journal of Crystal Growth

Volumn 288, Issue 2, 2006, Pages 273-277

  Goldhahn, R ^a   Schley, P ^a   Winzer, A T ^a   Rakel, M ^b   Cobet, C ^b   Esser, N ^b   Lu, H ^c   Schaff, W J ^c  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b ISAS INSTITUTE FOR ANALYTICAL SCIENCES   (Germany)

^c School of Operations Research and Industrial Engineering   (United States)

Author keywords

A1. Band structure; B1. Nitrides; B2. Semiconducting indium compounds

Indexed keywords

ANISOTROPY; BAND STRUCTURE; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; ELLIPSOMETRY; OSCILLATORS (ELECTRONIC); STRENGTH OF MATERIALS;

OPTICAL ANISOTROPY; VALENCE BAND ORDERING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 32644451171     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.007     Document Type: Article

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