Optical energies of AlInN epilayers

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Wang, K ^a   Martin, R W ^a   Amabile, D ^a   Edwards, P R ^a   Hernandez, S ^a   Nogales, E ^a   O'Donnell, K P ^a   Lorenz, K ^b   Alves, E ^b   Matias, V ^c   Vantomme, A ^c   Wolverson, D ^d   Watson, I M ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c KU LEUVEN   (Belgium)

^d University of Bath   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; OPTICAL BAND GAPS; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ABSORPTION ENERGIES; COMPOSITIONAL DEPENDENCE;

EPILAYERS;

EID: 42149112212     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2898533     Document Type: Article

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