Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation

Applied Physics Letters

Volumn 93, Issue 5, 2008, Pages

  Bhattacharyya, Jayeeta ^a   Ghosh, Sandip ^a   Grahn, H T ^b  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT POLARIZATION; METALLIC FILMS; PERTURBATION TECHNIQUES; POLARIZATION; SEMICONDUCTING GALLIUM; SUBSTRATES; TENSILE STRAIN; ZINC SULFIDE;

A-PLANE GAN; ACTIVE LAYERS; ALLOY FILMS; COMBINED EFFECTS; EFFICIENT EMISSIONS; GAN SUBSTRATES; III NITRIDES; IN-PLANE STRAINS; INTER-BAND TRANSITIONS; LIGHT EMISSION EFFICIENCIES; NON-POLAR; OPTICAL POLARIZATIONS; PERTURBATION THEORIES; SPECTRAL RANGES; ULTRA VIOLETS; VALENCE-BAND MIXING; VISIBLE SPECTRAL RANGES; WURTZITE;

GALLIUM ALLOYS;

EID: 51849134018     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2965119     Document Type: Article

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