Growth and properties of Al-rich InxAl1-xN ternary alloy grown on GaN template by metalorganic chemical vapour deposition

Journal of Physics D: Applied Physics

Volumn 41, Issue 9, 2008, Pages

  Oh, Tae Su ^a   Kim, Jong Ock ^a   Jeong, Hyun ^a   Lee, Yong Seok ^a   Nagarajan, S ^a   Lim, Kee Young ^a   Hong, Chang Hee ^a   Suh, Eun Kyung ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE MORPHOLOGY;

GROWTH MODES; NUCLEATION LAYERS;

TERNARY ALLOYS;

EID: 42549095954     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/9/095402     Document Type: Article

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