The effect of AIN interlayer thicknesses on scattering processes in lattice-matched AllnN/GaN two-dimensional electron gas heterostructures

New Journal of Physics

Volumn 11, Issue , 2009, Pages

  Teke, A ^a   Gokden S ^a   Tulek R ^a   Leach, J H ^b   Fan, Q ^b   Xie, J ^b   Ozgur U ^b   Morkoc H ^b   Lisesivdin, S B ^c   Ozbay E ^c  

^a BALIKESIR UNIVERSITY   (Turkey)

^b Virginia Commonwealth University   (United States)

^c BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY DISORDER; ALLOY SCATTERING; ALN; DEGREES OF EFFECTIVENESS; EXPECTED VALUES; GAN LAYERS; HETEROSTRUCTURES; HIGH ELECTRON MOBILITY; HIGH MOBILITY; INTERFACE ROUGHNESS; IONIZED IMPURITIES; LATTICE-MATCHED; OPTICAL PHONONS; OPTIMUM THICKNESS; ROOM TEMPERATURE; SCATTERING MECHANISMS; SCATTERING PROCESS; SHEET CARRIER DENSITIES; SPACER LAYER; SPACER LAYER THICKNESS; SPONTANEOUS POLARIZATIONS; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; THEORETICAL PREDICTION; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ACOUSTICS; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF GASES; ELECTRIC RESISTANCE; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; FORECASTING; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM COMPOUNDS; IONIZATION OF GASES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SINGLE CRYSTALS; TRANSPORT PROPERTIES; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

ACOUSTIC WAVE SCATTERING;

EID: 67650459463     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/11/6/063031     Document Type: Article

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