High-reflectivity GaN/air vertical distributed Bragg reflectors fabricated by wet etching of sacrificial AlInN layers

Semiconductor Science and Technology

Volumn 25, Issue 3, 2010, Pages

  Xiong, C ^a   Edwards, P R ^b   Christmann, G ^c   Gu, E ^b   Dawson, M D ^b   Baumberg, J J ^c   Martin, R W ^b   Watson, I M ^b  

^a PEKING UNIVERSITY   (China)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AIR-GAPS; ELECTROSTATIC TUNING; EPITAXIAL MULTILAYERS; GAN LAYERS; GAN SUBSTRATE; HIGH REFLECTIVITY; LATTICE-MATCHED; MICRO-BRIDGE; MICRO-REFLECTIVITY; PEAK REFLECTIVITY; REFLECTANCE SPECTRUM; SMALL SCALE; STOPBAND; WET-ETCH;

DISTRIBUTED BRAGG REFLECTORS; DRY ETCHING; GALLIUM ALLOYS; GALLIUM NITRIDE; LITHOGRAPHY; MULTILAYERS; PLASMA ETCHING; REFLECTION;

WET ETCHING;

EID: 76849085300     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/3/032001     Document Type: Article

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