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Applied Physics Letters

Volumn 95, Issue 8, 2009, Pages

Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes

(7) Chen, Z T a Sakai, Y a Zhang, J C a Egawa, T a Wu, J J b Miyake, H b Hiramatsu, K b

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

b MIE UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITIES; EFFECT OF STRAIN; SCHOTTKY; SOLAR-BLIND; STRAIN STATE;

EPILAYERS; INDIUM; METALLIC FILMS; PHOTODIODES; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM EFFICIENCY;

EID: 69549138328 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3213562 Document Type: Article

Times cited : (17)

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