High-current AlInN/GaN field effect transistors

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 832-836

  Dadgar, A ^a   Neuburger, M ^b   Schulze, F ^a   Biasing, J ^a   Krtschil, A ^a   Daumiller, I ^c   Kunze, M ^c   Gunther K M ^a   Witte, H ^a   Diez, A ^a   Kohn, E ^b   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b UNIVERSITY OF ULM   (Germany)

^c MicroGaN GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE MEASUREMENTS; HETEROINTERFACE; LATTICE-MATCHED STRUCTURES; SHEET CARRIER DENSITIES;

CAPACITANCE; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 25444513135     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200461466     Document Type: Conference Paper

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