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Volumn 93, Issue 4, 2008, Pages
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Photoluminescence properties of AlN homoepilayers with different orientations
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CORUNDUM;
ENERGY GAP;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
LIGHT EMISSION;
LUMINESCENCE;
METALS;
ORGANIC CHEMICALS;
ORGANIC COMPOUNDS;
ORGANOMETALLICS;
PHOTOLUMINESCENCE;
SAPPHIRE;
A-PLANE;
BAND GAPS;
COMPARATIVE STUDIES;
DEEP UV;
EMISSION INTENSITIES;
M-PLANE;
METAL-ORGANIC CHEMICAL VAPOR DEPOSITION;
NEW GENERATION;
NON-POLAR;
ORDERS-OF-MAGNITUDE;
PHOTOLUMINESCENCE PROPERTIES;
PHOTONIC DEVICES;
SAPPHIRE SUBSTRATES;
STRAIN-FREE;
ION BEAM ASSISTED DEPOSITION;
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EID: 49149103741
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2965613 Document Type: Article |
Times cited : (28)
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References (19)
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