AlInN/GaN based multi quantum well structures - growth and optical properties

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Hums, Christoph ^a   Gadanecz, Aniko ^a   Dadgar, Armin ^a   Bläsing, Jürgen ^a   Lorenz, Pierre ^b   Krischok, Stefan ^b   Bertram, Frank ^a   Franke, Alexander ^a   Schaefer, J A ^b   Christen, Jürgen ^a   Krost, Alois ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CRYSTALLINE QUALITY; HETEROSTRUCTURES; INDIRECT TRANSITION; INDIUM CONTENT; LUMINESCENCE BAND; LUMINESCENCE ENERGY; METAL-ORGANIC VAPOR PHASE EPITAXY; MULTI QUANTUM WELL STRUCTURES; PHOTOLUMINESCENCE MEASUREMENTS; SMOOTH INTERFACE; STOKES SHIFT; X RAY REFLECTION; XPS MEASUREMENTS;

ENERGY GAP; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; LUMINESCENCE; OPTICAL PROPERTIES; ORGANOMETALLICS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TELECOMMUNICATION REPEATERS; X RAY DIFFRACTION;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 77957730659     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880899     Document Type: Article

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