Solution-processed oxide semiconductors for low-cost and high-performance thin-film transistors and fabrication of organic light-emitting-diode displays

Journal of the Society for Information Display

Volumn 18, Issue 10, 2010, Pages 734-744

  Ryu, Myung Kwan ^a   Park, KyungBae ^a   Seon, Jong Baek ^a   Lee, Sang Yoon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Display; IZO; Oxide semiconductor; Solution process; TFT

Indexed keywords

ACTIVE LAYER; ACTIVE MATRIXES; AM-OLED; AMBIENT AIR; BACKPLANES; DISPLAY; IZO; OFF CURRENT; ORGANIC LIGHT-EMITTING; OXIDE SEMICONDUCTOR; PROCESS TEMPERATURE; SOLUTION-PROCESSED; STRESS TIME; SUBTHRESHOLD SWING; TEMPERATURE STRESS; TFT; THRESHOLD-VOLTAGE SHIFT;

FABRICATION; LIGHT EMISSION; SEMICONDUCTOR DIODES; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 77958161396     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/JSID18.10.734     Document Type: Article

References (60)

1. J. Y. Kwon et al., "4 inch QVGA AMOLED display driven by GalnZnO TFT," Proc. IMID '07, 141-144 (2007).
2. J. Y. Kwon et al., "GalnZnO TFT for active matrix display," Proc. 15th Intl. Workshop on Active-Matrix Flat panel Displays and Devices, 287-290 (2008).
3. P. F. Carcia et al., "Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering," Appl. Phys. Lett. 82, 1117-1119 (2003).
4. H-H. Hsieh and C-C. Wu, "Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes," Appl. Phys. Lett. 91, 013502 (2007).
5. N. L. Dehuff et al., "Transparent thin-film transistors with zinc indium oxide channel layer," J. Appl. Phys. 97, 064505 (2005).
6. R. Martins et al., "Transport in high mobility amorphous wide band gap indium zinc oxide films," Phys. Status Solidi (a) 202, R95-R97 (2005).
7. 7E. Fortunato et al., "High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature," Thin Solid Films 502, 104-107 (2006).
8. D. P. Heineck et al., "Zinc tin oxide thin-film-transistor enhancement/depletion inverter," IEEE Electron. Dev. Lett. 30, 514-516 (2009).
9. P. Görrn et al., "Zinc tin oxide based driver for highly transparent active matrix OLED displays," Solid State Electron. 53, 329-331 (2009).
10. Y. Kwon et al., "Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel," Appl. Phys. Lett. 84, 2685-2687 (2004).
11. K. Nomura et al., "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).
12. C-J. Kim et al., "Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors," Appl. Phys. Lett. 95, 252103 (2009).
13. D-H. Cho et al., "Transparent Al-Zn-Sn-O thin film transistors prepared at low temperature," Appl. Phys. Lett. 93, 142111 (2008).
14. Y. Ogo et al., "Amorphous Sn-Ga-Zn-O channel thin-film transistors," Phys. Status Solidi (a) 205, 1920-1924 (2008).
15. D-H. Cho et al., "Al and Sn-doped zinc indium oxide thin film transistors for AMOLED back-plane," SID Symposium Digest 40, 280-283 (2009).
16. H. Sirringhaus et al., "Two-dimensional charge transport in self-organized, high-mobility conjugated polymers," Nature 401, 685-688 (1999).
17. B. S. Ong et al., "High-performance semiconducting polythiophenes for organic thin-film transistors," J. Am. Chem. Soc. 126, 3378-3379 (2004).
18. C. R. Kagan et al., "Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors," Science 286, 945-947 (1999).
19. X. Duan et al., "High-performance thin-film transistors using semiconductor nanowires and nanoribbons," Nature 425, 274-278 (2003).
20. T. Shimoda et al., "Solution-processed silicon films and transistors," Nature 440, 783-786 (2006).
21. J-B. Seon et al., "Spin-coated CdS thin films for n-channel thin film transistors," Chem. Mater. 21, 604-611 (2009).
22. Y. Ohya et al., "Thin film transistor of ZnO fabricated by chemical solution deposition," Jpn. J. Appl. Phys. 40, 297-298 (2001).
23. B. J. Norris et al., "Spin-coated zinc oxide transparent transistors, J. Phy. D: Appl. Phys. 36, L105-L107 (2003).
24. B. S. Ong et al., "Stable, solution-processed, high-mobility ZnO thin-film transistors," J. Am. Chem. Soc. 129, 2750-2751 (2007).
25. H-C. Cheng et al., "Thin-film transistors with active layers ofzinc oxide (ZnO) fabricated by low-temperature chemical bath method," Thin Solid Films 498, 142-145 (2006).
26. C. Lia et al., "ZnO field-effect transistors prepared by aqueous solution-growth ZnO crystal thin film," J. Appl. Phys. 102, 076101-3 (2007).
27. B. Sun and H. Sirringhaus, "Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods," Nano Lett. 5, 2408-2413 (2005).
28. D. Levy et al., "Solution-processed zinc oxide thin-film transistors," SID Symposium Digest 38, 230-232 (2007).
29. Y-Y. Noh et al., "Ink-jet printed ZnO nanowire field effect transistors," Appl. Phys. Lett. 91, 043109 (2007).
30. J-Y. Oh et al., "ZnO TFTs fabricated at room temperature by solution process," SID Symposium Digest 39, 1274-1276 (2008).
31. J. J. Schneider et al., "A printed and flexible field-effect transistor device with nanoscale zinc oxide as active semiconductor material," Adv. Mater. 20, 3383-3387 (2008).
32. S. T. Meyers et al., "Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs," J. Am. Chem. Soc. 130, 17603-17609 (2008).
33. T. Kamiya et al., "Origins of high mobility and low operation voltage of amorphous oxide TFTs: Electronic structure, electron transport, defects and doping," J. Display Technol. 5, 273-288 (2009).
34. D-H. Lee et al., "A general route to printable high-mobility transparent amorphous oxide semiconductors," Adv. Mater. 19, 843-847 (2007).
35. G. H. Kim et al., "Inkjet-printed InGaZnO thin film transistor," Thin Solid Films 517, 4007-4010 (2009).
36. G. H. Kim et al., "Formation mechanism of solution-processed nanocrystalline InGaZnO thin film as active channel layer in thin-film transistor," J. Electrochem. Soc. 156 H7-H9 (2009).
37. J. H. Lim et al., "Solution-processed InGaZnO-based thin film transistors for printed electronics applications," Appl. Phys. Lett. 95, 012108 (2009).
38. W. H. Jeong et al., "Investigating addition effect of hafnium in InZnO thin film transistors using a solution process," Appl. Phys. Lett. 96, 093503 (2010).
39. S-C. Chiang et al., "Zn097Zr0 03O-TFT fabricated by sol-gel method and its application for active matrix LCDs," SID Symposium Digest 39, 1188-1191 (2008).
40. Y-C. Lai et al., "Solution processed IGZO-TFTs with various gate insulator layer applied to active matrix LCD," Proc. IDW '09, 1697-1700 (2009).
41. M-K. Ryu et al., "AMOLED driven by solution-processed oxide semiconductor TFT," SID Symposium Digest 40, 188-190 (2009).
42. S. Maensiri et al., "Indium oxide (In2O3) nanoparticles using Aloe vera plant extract: Synthesis and optical properties," J. Optoelect. Adv. Mater. 10, 161-165 (2008).
43. P. Barquinha et al., "Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide," J. Non-Cryst. Solids 352, 1749-1752 (2006). (Pubitemid 43833305)
44. T. Minami, "Transparent and conductive multicomponent oxide films prepared by magnetron sputtering," J. Vac. Sci. Technol. A17, 1765-1772 (1999).
45. J. S. Park et al., "Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment," Appl. Phys. Lett. 90, 262106 (2007).
46. B. D. Ahn et al. , "Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors," Appl. Phys. Lett. 93, 203506 (2008).
47. J-S. Park et al., "Control of threshold voltage in ZnO-based oxide thin film transistors," Appl. Phys. Lett. 93, 033513 (2008).
48. T. Iwasaki et al., "Combinational approach to thin-film transistors using multicomponent semiconductor channels: An applications to amorphous oxide semiconductors in In-Ga-Zn-O system," Appl. Phys. Lett. 90, 242114 (2007).
49. H-H. Hsieh and C-C. Wu, "Scaling behavior of ZnO transparent thin- film transistors," Appl. Phys. Lett. 89, 041109 (2006).
50. K-B. Park et al., "High electrical performance ofwet-processed indium zinc oxide thin-film transistors," IEEE Electron. Dev. Lett. 31 , 311-313 (2010).
51. K. Nomura et al., "Origins of threshold voltage shifts in room-temperature deposited and annealed α-In-Ga-Zn-O thin-film transistors," Appl. Phys. Lett. 95, 013502 (2009).
52. F. R. Libsch and J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors," Appl. Phys. Lett. 62, 1286 (1993).
53. M. E. Lopes et al., "Gate-bias stress in amorphous oxide semiconductors thin-film transistors," Appl. Phys. Lett. 95, 063502 (2009).
54. K-H. Lee et al., "The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors," Appl. Phys. Lett. 95, 232106 (2009).
55. M-K. Kim et al., "High mobility bottom gate InGaZnO thin film transistors with SiOxetch stopper," Appl. Phys. Lett. 90, 212114 (2007).
56. B. A. Ridley et al., "All-inorganic field effect transistors fabricated by printing," Science 286, 746-749 (1999).
57. H. Sirringhaus et al., "High-resolution inkjet printing of all-polymer transistor circuits," Science 290, 2123-2126 (2000). (Pubitemid 32001588)
58. S. T. Meyers et al. , "Solution-processed aluminum oxide phosphate thin-film dielectrics," Chem. Mater. 19, 4023-4029 (2007).
59. B. N. Pal et al., "Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors," Nature Mater. 8, 898-903 (2009).
60. G. L. Whiting and A. C. Arias, "Chemically modified ink-jet printed silver electrodes for organic field-effect transistors," Appl. Phys. Lett. 95, 253302 (2009).