High electrical performance of wet-processed indium zinc oxide thin-film transistors

IEEE Electron Device Letters

Volumn 31, Issue 4, 2010, Pages 311-313

  Park, Kyung Bae ^a   Seon, Jong Baek ^a   Kim, Gun Hee ^b   Yang, Mino ^a   Koo, Bonwon ^a   Kim, Hyun Jae ^b   Ryu, Myung Kwan ^a   Lee, Sang Yoon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Display device; Indium zinc oxide (IZO); Solution process; Thin film transistor (TFT)

Indexed keywords

DEPLETION MODES; ELECTRICAL PERFORMANCE; GATE VOLTAGES; INDIUM ZINC OXIDES; ON/OFF RATIO; PHOTOLITHOGRAPHIC PROCESS; SATURATION MOBILITY; SOLUTION PROCESS; SOLUTION-PROCESSED; STRESS CONDITION; SUBTHRESHOLD SLOPE; THIN-FILM TRANSISTOR (TFT); THRESHOLD VOLTAGE SHIFTS; TRANSFER CHARACTERISTICS; TURN ON VOLTAGE; VOLTAGE DEPENDENCE;

AMORPHOUS FILMS; AMORPHOUS SILICON; DISPLAY DEVICES; INDIUM; PHOTOLITHOGRAPHY; SEMICONDUCTING ORGANIC COMPOUNDS; THRESHOLD VOLTAGE; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77950095921     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2040130     Document Type: Article

References (12)

1. B. J. Norris, J. Anderson, J. F. Wager, and D. A. Keszler, "Spin-coated zinc oxide transparent transistors," J. Phys. D, Appl. Phys., vol.36, no.20, pp. L105-L107, Oct. 2003.
2. Y.-J. Chang, D.-H. Lee, G. S. Herman, and C.-H. Chang, "High-performance, spin-coated zinc tin oxide thin-film transistors," Elec-trochem. Solid-State Lett., vol.10, no.5, pp. H135-H138, Feb. 2007.
3. D.-H. Lee, Y.-J. Chang, G. S. Herman, and C.-H. Chang, "A general route to printable high-mobility transparent amorphous oxide semiconductors," Adv. Mater., vol.19, no.6, pp. 843-847, Feb. 2007.
4. C. G. Choi, S. J. Seo, and B. S. Bae, "Solution-processed indium-zinc transparent thin-film transistors," Electrochem. Solid-State Lett., vol.11, no.1, pp. H7-H9, Oct. 2008.
5. M. K. Ryu, K. B. Park, J. B. Seon, J. I. Park, I. S. Kee, Y. G. Lee, and S. Y. Lee, "AMOLED driven by solution-processed oxide semiconductor TFT," in Proc. SID Int. Symp. Dig., May 2009, vol.15, pp. 188-190.
6. G. H. Kim, H. S. Shin, B. D. Ahn, K. H. Kim, W. J. Park, and H. J. Kim, "Formation mechanism of solution-processed nanocrystalline InGaZnO thin film as active channel layer in thin-film transistor," J. Electrochem. Soc., vol.156, no.1, pp. H7-H9, Jan. 2009.
7. D. G. Baik & S. M. Cho "Application of sol-gel derived films for ZnO/n-Si junction solar cells" Thin Solid Films 354;1/2: 227-231, Oct; 1999
8. J. Xu, Q. Pan, Y. Shun, and Z. Tian, "Grain size control and gas sensing properties of ZnO gas sensor," Sens. Actuators B, Chem., vol.66, no.1, pp. 277-279, Jan. 2000.
9. S. H. Noh, W. Choi, M. S. Oh, D. K. Hwang, K. Lee, S. Im, S. Jang, and E. Kim, "ZnO-based nonvolatile memory thin-film transistors with polymer dielectric/ferroelectric double gate insulators," Appl. Phys. Lett., vol.90, no.25, p. 253 504, Jun. 2007.
10. F. R. Libsch and J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors," Appl. Phys. Lett., vol.62, no.11, pp. 1286-1288, Mar. 1993.
11. C. van Berkel and M. J. Powell, "Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistors," Appl. Phys. Lett., vol.51, no.14, pp. 1094-1096, Oct. 1987.
12. 4 thin-film transistors," Appl. Phys. Lett., vol.92, no.13, p. 133 512, Apr. 2008.