Control of threshold voltage in ZnO-based oxide thin film transistors

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Park, Jin Seong ^a   Jeong, Jae Kyeong ^a   Mo, Yeon Gon ^a   Kim, Hye Dong ^a   Kim, Chang Jung ^b  

^a Samsung SDI   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; AMORPHOUS SILICON; GALLIUM; HEALTH; MOLECULAR BEAM EPITAXY; OXIDES; SEMICONDUCTING ZINC COMPOUNDS; SILICON; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ZINC; ZINC OXIDE; ZINC SULFIDE;

ACTIVE LAYERS; AMERICAN INSTITUTE OF PHYSICS (AIP); AMORPHOUS SI; ANOMALOUS BEHAVIOR; CAPACITANCE-VOLTAGE (C-V) MEASUREMENTS; CHEMICAL DOPING; FIELD-EFFECT MOBILITY (FEM); FREE ELECTRON DENSITY; IONOFF RATIO; SUBTHRESHOLD GATE SWING;

TRANSISTORS;

EID: 48249117996     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2963978     Document Type: Article

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