Transport in high mobility amorphous wide band gap indium zinc oxide films

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 9, 2005, Pages

  Martins, R ^a   Barquinha, P ^a   Pimentel, A ^a   Pereira, L ^a   Fortunato, E ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED STRUCTURAL DEFECTS; OXYGEN PARTIAL PRESSURE; POLYCRYSTALLINE SEMICONDUCTORS; ROOM TEMPERATURE;

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; MAGNETRON SPUTTERING; PRESSURE EFFECTS; SEMICONDUCTOR MATERIALS; TEMPERATURE DISTRIBUTION; THIN FILMS; ZINC OXIDE;

INDIUM COMPOUNDS;

EID: 25444495236     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200521020     Document Type: Article

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