SCOPUS 정보 검색 플랫폼

Volumn 39, Issue 1, 2008, Pages 1188-1191

Zn0.97 Zr0.03O-TFT fabricated by sol-gel method and its application for active matrix LCDs

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; SOL-GEL PROCESS; SOL-GELS; THRESHOLD VOLTAGE; ZINC COMPOUNDS; ZIRCONIUM COMPOUNDS;

ACTIVE CHANNEL LAYERS; ACTIVE MATRIX LCD; FIELD-EFFECT MOBILITIES; ITS APPLICATIONS;

THIN FILM TRANSISTORS;

EID: 54549107733 PISSN: 0097966X EISSN: None Source Type: Conference Proceeding
DOI: 10.1889/1.3069347 Document Type: Conference Paper

Times cited : (7)

References (7)

1
- 2942609361
- ZnO-Channel Thin-Film Transistor: Channel Mobility
- R. L. Hoffman, "ZnO-Channel Thin-Film Transistor: Channel Mobility", J. Appl. Phys., Vol. 95, pp. 5813-5819, 2004.
- (2004) J. Appl. Phys , vol.95 , pp. 5813-5819
- Hoffman, R.L.¹

2
- 22944469098
- Recent Advances in ZnO Transparent Thin Film Transistors
- E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L. Pereira, and R. Martins, "Recent Advances in ZnO Transparent Thin Film Transistors", Thin Solid Films, Vol. 487, pp. 205-211, 2005.
- (2005) Thin Solid Films , vol.487 , pp. 205-211
- Fortunato, E.¹ Barquinha, P.² Pimentel, A.³ Goncalves, A.⁴ Marques, A.⁵ Pereira, L.⁶ Martins, R.⁷

3
- 31144460426
- Comparison of ZnO Metal-Oxide-Semiconductor Field Effect Transistor and Metal-Semiconductor Field Effect Transistor Structures Grown on Sapphire by Pulsed Laser Deposition
- C. J. Kao, Y. W. Kwon, Y. W. Heo, D. P. Norton, S. J. Pearton, F. Ren, and G. C. Chi, "Comparison of ZnO Metal-Oxide-Semiconductor Field Effect Transistor and Metal-Semiconductor Field Effect Transistor Structures Grown on Sapphire by Pulsed Laser Deposition", J. Vac. Sci. Technol. B, Vol. 23, pp. 1024-1028, 2005.
- (2005) J. Vac. Sci. Technol. B , vol.23 , pp. 1024-1028
- Kao, C.J.¹ Kwon, Y.W.² Heo, Y.W.³ Norton, D.P.⁴ Pearton, S.J.⁵ Ren, F.⁶ Chi, G.C.⁷

4
- 0037323096
- Transparent Thin Film Transistors Using ZnO as An Active Channel Layer and Their Electrical Properties
- S. Masuda, K. Kitamura, Y. Okumura, and S. Miyatake, "Transparent Thin Film Transistors Using ZnO as An Active Channel Layer and Their Electrical Properties", J. Appl. Phys., Vol. 93, pp. 1624-1630, 2003.
- (2003) J. Appl. Phys , vol.93 , pp. 1624-1630
- Masuda, S.¹ Kitamura, K.² Okumura, Y.³ Miyatake, S.⁴

5
- 0242305195
- Spin-Coated Zinc Oxide Transparent Transistors
- B. J. Norris, J. Anderson, J. F. Wager, and D. A. Keszler, "Spin-Coated Zinc Oxide Transparent Transistors", J. Phys. D: Appl. Phys., Vol. 36, pp. L105, 2003.
- (2003) J. Phys. D: Appl. Phys , vol.36
- Norris, B.J.¹ Anderson, J.² Wager, J.F.³ Keszler, D.A.⁴

6
- 31544457337
- xO Thin Films Used as Active Channel Layer of Thin-Film Transistors
- xO Thin Films Used as Active Channel Layer of Thin-Film Transistors", Jpn. J. Appl. Phys., Vol. 44, pp. 4784-4789, 2005.
- (2005) Jpn. J. Appl. Phys , vol.44 , pp. 4784-4789
- Lee, J.H.¹ Lin, P.² Lee, C.C.³ Ho, J.C.⁴ Wang, Y.W.⁵

7
- 33244478727
- xO Thin Films as Active Channel Layers of Thin-Film Transistors
- xO Thin Films as Active Channel Layers of Thin-Film Transistors, Electrochem. Solid-State Lett., Vol. 9, pp. G117, 2006.
- (2006) Electrochem. Solid-State Lett , vol.9
- Lee, J.H.¹ Lin, P.² Ho, J.C.³ Lee, C.C.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.