Ink-jet printed ZnO nanowire field effect transistors

Applied Physics Letters

Volumn 91, Issue 4, 2007, Pages

  Noh, Yong Young ^a   Cheng, Xiaoyang ^a   Sirringhaus, Henning ^a   Sohn, Jung Inn ^b   Welland, Mark E ^b   Kang, Dae Joon ^c,d  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c Sungkyunkwan University   (South Korea)

^d Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC EQUIPMENT; GATE DIELECTRICS; NANOWIRES; POLYMETHYL METHACRYLATES; PRINTING; ZINC OXIDE;

DRAIN ELECTRODES; ELECTRODE ARRAYS; NANOWIRE FIELD EFFECT TRANSISTORS (NW-FETS);

FIELD EFFECT TRANSISTORS;

INK JET PRINTING; SEMICONDUCTOR DEVICES;

EID: 34547484976     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2760041     Document Type: Article

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