ZnO TFTs fabricated at room temperature by solution process

Digest of Technical Papers - SID International Symposium

Volumn 39, Issue 3, 2008, Pages 1274-1276

  Oh, Ji Young ^a   Kang, Seung Youl ^a   Hwang, Chi Sun ^a   Kim, Gi Hyun ^a   Seong, Duk Ahn ^a   Kim, Chul Am ^a   Jae, Bon Koo ^a   Suh, Kyoung Soo ^a   Shim, Hong Ku ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

II-VI SEMICONDUCTORS; SILICA; THIN FILM TRANSISTORS; ZINC OXIDE;

FIELD MOBILITY; OFF CURRENT; ROOM-TEMPERATURE CONDITIONS; SOLUTION PROCESS; SPIN CASTING; ULTRASONIC METHODS; ZNO NANOROD;

NANORODS;

EID: 54549116784     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3069371     Document Type: Conference Paper

References (4)

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2. B. Sun, and H. Sirringhaus, Nano Lett., 5, 2408, 2005
3. D. Levy, and L. Irving, SID'07, 230, 2007
4. S. Lee. A. Jeong, D. Kim, B. K. Park, and J. Moon, 42, 361, 2007