Piezoresistive polysilicon film obtained by low-temperature aluminum-induced crystallization

Thin Solid Films

Volumn 519, Issue 1, 2010, Pages 479-486

  Patil, Suraj Kumar ^a,b   Çelik Butler, Zeynep ^a,b   Butler, Donald P ^a,b  

^a University of Texas at Arlington   (United States)

^b UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

Author keywords

Aluminum induced crystallization; Piezoresistor; Polysilicon

Indexed keywords

ALUMINUM-INDUCED CRYSTALLIZATION; APPLIED PRESSURE; ATOMIC FORCE MICROSCOPES; CONTACT MODES; FLEXIBLE POLYIMIDE SUBSTRATE; LOW COSTS; LOW PRESSURES; LOW TEMPERATURES; LOW-TEMPERATURE DEPOSITION; MICROMACHINED SILICON; PIEZO-RESISTIVE; PIEZORESISTIVE PROPERTIES; PIEZORESISTOR; POLY-CRYSTALLINE SILICON; POLYSILICON FILMS; PRESSURE SENSING; RESISTANCE CHANGE; WHEATSTONE BRIDGES;

ALUMINUM; BRIDGE CIRCUITS; CRYSTALLIZATION; POLYIMIDES; POLYSILICON; PRESSURE SENSORS; SILICON NITRIDE;

ALUMINUM COATINGS;

EID: 77957704555     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.07.121     Document Type: Article

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