Excimer laser recrystallization of amorphous silicon investigated by normal incidence spectral reflectivity

Semiconductor Science and Technology

Volumn 12, Issue 6, 1997, Pages 750-754

  Sands, D ^a   Williams, G ^a   Key, P H ^a  

^a UNIVERSITY OF HULL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010489364     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/6/018     Document Type: Article

References (11)

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2. Shimuzu K, Sugiura O and Matsumura M 1993 IEEE Trans. Electron Devices 40 112-7
3. Brotherton S D, McCulloch D J, Clegg J B and Gowers J P 1993 IEEE Trans. Electron Devices 40 407-13
4. Williams G, Sands D, Geatches R M and Reeson K J 1996 Appl. Phys. Lett. 69 1623-5
5. Brotherton S D 1996 Private communication
6. Toussaere E and Zyss J 1993 Thin Solid Films 234 432-8
7. Attrill K J 1986 PhD Thesis University of Bradford, UK
8. Palik ED 1985 Handbook of Optical Constants of Solids (Orlando: Academic)
9. INSPEC 1988 Properties of Silicon EMIS data review series (London)
10. INSPEC 1989 Properties of Amorphous Silicon EMIS data review series 2nd edn (London)
11. Forouhi and Bloomer I 1986 Phys. Rev. B 34 7018-26