Low-temperature polycrystalline silicon deposition by very high frequency sputtering using Ar and H2

Journal of the Electrochemical Society

Volumn 144, Issue 11, 1997, Pages 3973-3978

  Jang, Y H ^a,b   Park, W S ^a   Takeya, M ^a   Jong, G S ^a   Ohmi, T ^a,c  

^a TOHOKU UNIVERSITY   (Japan)

^b LG Electronics Inc   (South Korea)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; GRAIN BOUNDARIES; HYDROGEN; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON;

HIGH FREQUENCY SPUTTERING; ION FLUX INCIDENT; POLYCRYSTALLINE SILICON;

SPUTTER DEPOSITION;

EID: 0031269144     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838121     Document Type: Article

References (25)

1. T. Sameshima, M. Hara, and S. Usui, Jpn. J. Appl. Phys., 28, 1789 (1989).
2. M. K. Hatalis and D. W. Greve, IEEE Electron. Device Lett., EDL-8, 361 (1987).
3. N. Shibata, K. Fukuda, H. Ohtoshi, J. Hanna, S. Oda, and I. Shimizu, Jpn. J. Appl. Phys., 26, L10 (1987).
4. T. Akasaka and I. Shimizu, Appl. Phys. Lett., 66, 3441 (1995).
5. H. Kakinuma, M. Mohri, and T. Tsuruoka, Jpn. J. Appl. Phys., 31, L1392 (1992).
6. M. Mohri, H. Kakinuma, M. Sakamoto, and H. Sawai, ibid., 30, L779 (1991).
7. C. C. Tsai, in Amorphous Silicon and Related Materials, H. Fritzsche, Editor, Vol. A, p. 123, World Scientific, Singapore (1989).
8. T. Ohmi and T. Shibata, Thin Solid Films, 241, 159 (1993).
9. M. Hirayama, W. Shindo, and T. Ohmi, Jpn. J. Appl. Phys., 33, 2272 (1994).
10. D. K. Schroder, in Semiconductor Material and Device Characterization, p. 1, John Wiley & Sons, New York (1990).
11. J. Y. W. Seto, J. Appl. Phys., 46, 5247 (1975).
12. T. Kamins, in Polycrystalline Silicon for Integrated Circuit Applications, p. 155, Kluwer Academic Publishers, Boston, MA (1988).
13. M. H. Brodsky, M. Cardona, and J. J. Cuomo, Phys. Rev., B16, 3556 (1977).
14. G. Amato, G. Della Mea, F. Fizzotti, C. Manfredotti, R. Marchisio, and A. Paccagnella, Phys. Rev., B43, 6627 (1991).
15. W. S. Park, Y. H. Jang, M. Takeya, G. S. Jong, and T. Ohmi, Abstracts, of the MRS 1997 Spring Meeting, p. 32, Materials Research Society, Pittsburgh, PA (1997).
16. J. Jang, S. O. Koh, T. G. Kim, and S. C. Kim, Appl. Phys. Lett., 60, 2874 (1992).
17. M. J. Thompson, in The Physics of Hydrogenated Amorphous Silicon, J. D. Joannopoulos and G. Lucovsky, Editor, Vol. 1, p. 119, Springer-Verlag, Berlin (1984).
18. J. Shirafuji, H. Matsui, A. Narukawa, and Y. Inuishi, Appl. Phys. Lett., 41, 535 (1982).
19. F. Finger, P. Hapke, M. Luysberg, R. Carius, H. Wagner, and M. Scheib, ibid., 65, 2588 (1994).
20. M. Heintze and R. Zedlitz, J. Non-Cryst. Solids, 164-166, 55 (1992).
21. B. Chapman, in Glow Discharge Process, p. 139, John Wiley & Sons, Inc., New York (1980).
22. H. H. Goto, M. Sasaki, T. Ohmi, T. Shibata, A. Yamaguchi, N. Okamura, and O. Kamiya, IEEE Trans. Semicond. Manuf., 4, 111 (1991).
23. W. Shindo and T. Ohmi, J. Appl Phys., 179, 2347 (1996).
24. H. P. Klug and L. A. Alexander, in X-Ray Diffraction Procedures, p. 716, John Wiley & Sons, New York (1954).
25. G. R. Fowles, in Introduction to Modern Optics, 2nd ed., p. 97, Holt, Rinehart and Winston, New York (1975).