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Journal of Materials Science: Materials in Electronics

Volumn 12, Issue 12, 2001, Pages 697-701

Characterization of laser annealed polycrystalline silicon films on various substrates

(5) Yi, Chung a Rhee, Shi Woo a Ju, Jin Ho b Yim, Sung Kyun b Min, Hoonkee b

a Pohang University of Science and Technology (POSTECH) (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; EXCIMER LASERS; GRAIN SIZE AND SHAPE; LIQUID CRYSTAL DISPLAYS; RECRYSTALLIZATION (METALLURGY); SEMICONDUCTING FILMS; SILICA; SURFACE ROUGHNESS; THERMAL CONDUCTIVITY; X RAY ANALYSIS;

EXCIMER LASER ANNEALING (ELA); LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

POLYSILICON;

EID: 0035673178 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/A:1012984608659 Document Type: Article

Times cited : (8)

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