Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics

Semiconductor Science and Technology

Volumn 19, Issue 6, 2004, Pages 759-763

  Peng, Y C ^a,b   Fu, G S ^a   Yu, W ^a   Li, S Q ^c   Wang, Y L ^a  

^a HEBEI UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; EXCIMER LASERS; HIGH RESOLUTION ELECTRON MICROSCOPY; LASER ABLATION; MORPHOLOGY; OPTOELECTRONIC DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PULSED LASER APPLICATIONS; RAMAN SCATTERING; STRAIN;

LASER ABLATED DEPOSITION (LAD); LASER ANNEALING TECHNIQUE; LASER ENERGY DENSITY;

NANOSTRUCTURED MATERIALS;

EID: 2942583995     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/6/018     Document Type: Article

References (12)

1. Peng Y C, Zhao X W and Fu G S 2002 Chin. Sci. Bull. 47 1233
2. Werwa E, Seraphin A A, Chiu L A, Zhou C X and Kolenbrander K D 1994 Appl. Phys. Lett. 64 1821
3. Yoshida T, Takeyama S, Yamada Y and Matoh K 1996 Appl. Phys. Lett. 68 1772
4. Makimura T, Mizuta T and Murakami K 2002 Japan. J. Appl. Phys. 41 L144
5. Giust G K and Sigmon T W 1996 Appl. Phys. Lett. 70 767
6. Wang M, Huang X, Xu J and Feng D 1998 Appl. Phys. Lett. 72 722
7. Fogarassy E, Unamuno S, Prevot B, Stehle M and Pribat D 1999 Appl. Phys. A 68 631
8. Watanabe A, Hojo F, Miwa T and Wakagi M 2002 Japan. J. Appl. Phys. 41 L378
9. Jin Z H, Bhat G A, Yeung M, Kwok H S and Wong M 1998 J. Appl. Phys. 84 194
10. Jiang Y L, Ru G P and Lu F 2003 J. Appl. Phys. 93 866
11. Shin A, Mang C Y, Lee S C and Chem M Y 2000 J. Appl. Phys. 88 3725
12. Hayzelden C and Batsone J C 1993 J. Appl. Phys. 84 194