Polycrystalline silicon thin films on glass substrate

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 303-307

  Dimova Malinovska, D ^a   Angelov, O ^a   Sendova Vassileva, M ^a   Kamenova, M ^a   Pivin, J C ^b  

^a CTRL LAB SOLAR ENER NEW ENER S   (Bulgaria)

^b CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

Author keywords

Metal induced crystallization; Polycrystalline Si; Polycrystalline SiGe; Raman spectra; Structural properties

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTALLIZATION; EVAPORATION; GLASS; HALL EFFECT; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; POLYSILICON; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL-INDUCED CRYSTALLIZATION; POLYCRYSTALLINE FILMS;

THIN FILMS;

EID: 1442335811     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.054     Document Type: Conference Paper

References (13)

1. O. Nast, T. Puzzer, C.T. Chou, M. Birkholz, 16th EPV SEC, Glasgow, UK, 2000.
2. S. Gall, L. Sieber, M. Muske, O. Nast. W. Fuhs, 17th EPVSEC, Munich, Germany, 2001.
3. Gall S., Muske M., Sieber I., Nast O., Fuhs W. J. Non-Cryst. Solids. 299-302:2002;741.
4. Lee J.B., Kim C.-H., Kwon S.-Y., Choi D.-K. Mater. Res. Soc. Symp. Proc. 664:2001;A6.8.1.
5. Lee S.W., Jeon Y.C., Joo S.K. Appl. Phys. Lett. 66:1995;1671.
6. Lee S.W., Joo S.K. IEEE Electr. Devices Lett. 17:1996;160.
7. Lee C.J., Lee J.B., Chung Y.C., Choi D.K. Jpn. J. Appl. Phys. 39:2000;6191.
8. Nast O., Brehme S., Neuhaus D.-H., Wenham S.R. IEEE Trans. Electr. Devices. 46:1999;2062.
9. Chambouleyron I., Fajardo F., Zanatta A.R. J Non-Cryst. Solids. 299-302:2002;143.
10. Houben L., Luysberg M., Hapke P., Carius R., Finger F., Wagner H. Philos. Mag. A. 77:1998;1447.
11. Lengsfeld P., Nickel N. J. Non-Cryst. Solids. 299-302:2002;778.
12. Lanin J. Phys. Rev. B. 16:1977;1510.
13. Dimova-Malinovska D., Nedialkova L. Sol. Energy Mater. Sol. Cells. 31:1993;283.